| No. |
Part Name |
Description |
Manufacturer |
| 8851 |
PMEG60T30ELR |
60 V, 3 A low leakage current Trench MEGA Schottky barrier rectifier |
Nexperia |
| 8852 |
PMEG60T50ELP |
60 V, 5 A low leakage current Trench MEGA Schottky barrier rectifier |
Nexperia |
| 8853 |
PMEGXX10BEA |
1 A very low VF MEGA Schottky barrier rectifier |
Philips |
| 8854 |
PMEGXX10BEV |
1 A very low VF MEGA Schottky barrier rectifier |
Philips |
| 8855 |
PSMN0R9-30ULD |
N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology |
Nexperia |
| 8856 |
PSMN1R0-40ULD |
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 8857 |
PSMN1R0-40YLD |
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 8858 |
PSMN1R0-40YSH |
N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 8859 |
PSMN1R5-40YSD |
N-channel 40 V, 1.5 mΩ, 190 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 8860 |
PSMN1R7-40YLD |
N-channel 40 V, 1.7 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 8861 |
PSMN1R9-40YSD |
N-channel 40 V, 1.9 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 8862 |
PSMN2R0-40YLD |
N-channel 40 V, 2.1 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 8863 |
PSMN2R2-40YSD |
N-channel 40 V, 2.2 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 8864 |
PSMN2R5-40YLD |
N-channel 40 V, 2.5 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 8865 |
PSMN2R8-40YSD |
N-channel 40 V, 2.7 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 8866 |
PSMN3R2-40YLD |
N-channel 40 V, 3.1 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 8867 |
PSMN3R5-40YSD |
N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 8868 |
PSMNR90-40YLH |
N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 8869 |
Q62702-A0042 |
Silicon Crossover Ring Quad Schottky Diode |
Siemens |
| 8870 |
Q62702-A0043 |
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers, phase detectors and modulators) |
Siemens |
| 8871 |
Q62702-A0062 |
Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) |
Siemens |
| 8872 |
Q62702-A0960 |
Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
Siemens |
| 8873 |
Q62702-A1004 |
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
Siemens |
| 8874 |
Q62702-A1006 |
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators) |
Siemens |
| 8875 |
Q62702-A1017 |
Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators) |
Siemens |
| 8876 |
Q62702-A1028 |
Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) |
Siemens |
| 8877 |
Q62702-A1028 |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
Siemens |
| 8878 |
Q62702-A1046 |
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high speed switching) |
Siemens |
| 8879 |
Q62702-A1065 |
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 8880 |
Q62702-A1066 |
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| | | |
