| No. |
Part Name |
Description |
Manufacturer |
| 8851 |
2N3905 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 8852 |
2N3905 |
Low Noise PNP Transistor |
FERRANTI |
| 8853 |
2N3905 |
Switching PNP transistor |
FERRANTI |
| 8854 |
2N3905 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
| 8855 |
2N3905 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
| 8856 |
2N3905 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 8857 |
2N3905 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 8858 |
2N3905 |
PNP silicon annular transistor, TO-92 case |
Motorola |
| 8859 |
2N3905 |
Silicon PNP Transistor |
Motorola |
| 8860 |
2N3905 |
PNP Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 8861 |
2N3905 |
PNP Silicon Transistor |
NEC |
| 8862 |
2N3905 |
General Purpose Transistors(PNP Silicon) |
ON Semiconductor |
| 8863 |
2N3905 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 8864 |
2N3905 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 8865 |
2N3905 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 8866 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 8867 |
2N3905-D |
General Purpose Transistors PNP Silicon |
ON Semiconductor |
| 8868 |
2N3906 |
PNP Silicon Transistor (General small signal application Switching application) |
AUK Corp |
| 8869 |
2N3906 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 8870 |
2N3906 |
0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 60 - hFE |
Continental Device India Limited |
| 8871 |
2N3906 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 8872 |
2N3906 |
Low Noise PNP Transistor |
FERRANTI |
| 8873 |
2N3906 |
Switching PNP transistor |
FERRANTI |
| 8874 |
2N3906 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
| 8875 |
2N3906 |
SMALL SIGNAL TRANSISTORS (PNP) |
General Semiconductor |
| 8876 |
2N3906 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
| 8877 |
2N3906 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 8878 |
2N3906 |
Switching Transistor |
Korea Electronics (KEC) |
| 8879 |
2N3906 |
Vce=1.0V transistor |
MCC |
| 8880 |
2N3906 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
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