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Datasheets for MSUN

Datasheets found :: 10335
Page: | 293 | 294 | 295 | 296 | 297 | 298 | 299 | 300 | 301 |
No. Part Name Description Manufacturer
8881 MC7915C 3-terminal negative voltage regulator Samsung Electronic
8882 MC7918C 3-terminal negative voltage regulator Samsung Electronic
8883 MC7924C 3-terminal negative voltage regulator Samsung Electronic
8884 MC79M05C 3-terminal 0.5A negative voltage regulator Samsung Electronic
8885 MC79M06C 3-terminal 0.5A negative voltage regulator Samsung Electronic
8886 MC79M08C 3-terminal 0.5A negative voltage regulator Samsung Electronic
8887 MC79M12C 3-terminal 0.5A negative voltage regulator Samsung Electronic
8888 MC79M15C 3-terminal 0.5A negative voltage regulator Samsung Electronic
8889 MC79M18C 3-terminal 0.5A negative voltage regulator Samsung Electronic
8890 MC79M24C 3-terminal 0.5A negative voltage regulator Samsung Electronic
8891 MC79XX SERIES 3-terminal 0.5A negative voltage regulator Samsung Electronic
8892 MC79XXC SERIES 3-terminal negative voltage regulator Samsung Electronic
8893 MC79XXCT SERIES 3-terminal 0.5A negative voltage regulator Samsung Electronic
8894 MC79XXCT SERIES 3-terminal negative voltage regulator Samsung Electronic
8895 MJD127 PNP darlington transistor for high DC current gain, 100V, 8A Samsung Electronic
8896 MJD127-1 PNP darlington transistor for high DC current gain, 100V, 8A Samsung Electronic
8897 MJE170 -60 V, -3 A, PNP epitaxial silicon transistor Samsung Electronic
8898 MJE171 -80 V, -1 A, PNP epitaxial silicon transistor Samsung Electronic
8899 MJE172 -100 V, -1 A, PNP epitaxial silicon transistor Samsung Electronic
8900 MJE180 60 V, 3 A, NPN epitaxial silicon transistor Samsung Electronic
8901 MJE181 60 V, 3 A, NPN epitaxial silicon transistor Samsung Electronic
8902 MJE182 60 V, 3 A, NPN epitaxial silicon transistor Samsung Electronic
8903 MJE200 40 V, 5 A, NPN epitaxial silicon transistor Samsung Electronic
8904 MJE210 -40 V, -5 A, PNP epitaxial silicon transistor Samsung Electronic
8905 MJE2955T -70 V, -10 A, PNP silicon transistor Samsung Electronic
8906 MJE3055T 70 V, 10 A, NPN silicon transistor Samsung Electronic
8907 MJE340 300 V, 500 A, NPN epitaxial silicon transistor Samsung Electronic
8908 MJE350 -300 V, -500 A, PNP epitaxial silicon transistor Samsung Electronic
8909 MJE700 -60 V, -4 A, NPN epitaxial silicon darlington transistor Samsung Electronic
8910 MJE701 -60 V, -4 A, NPN epitaxial silicon darlington transistor Samsung Electronic


Datasheets found :: 10335
Page: | 293 | 294 | 295 | 296 | 297 | 298 | 299 | 300 | 301 |



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