No. |
Part Name |
Description |
Manufacturer |
8881 |
MC7915C |
3-terminal negative voltage regulator |
Samsung Electronic |
8882 |
MC7918C |
3-terminal negative voltage regulator |
Samsung Electronic |
8883 |
MC7924C |
3-terminal negative voltage regulator |
Samsung Electronic |
8884 |
MC79M05C |
3-terminal 0.5A negative voltage regulator |
Samsung Electronic |
8885 |
MC79M06C |
3-terminal 0.5A negative voltage regulator |
Samsung Electronic |
8886 |
MC79M08C |
3-terminal 0.5A negative voltage regulator |
Samsung Electronic |
8887 |
MC79M12C |
3-terminal 0.5A negative voltage regulator |
Samsung Electronic |
8888 |
MC79M15C |
3-terminal 0.5A negative voltage regulator |
Samsung Electronic |
8889 |
MC79M18C |
3-terminal 0.5A negative voltage regulator |
Samsung Electronic |
8890 |
MC79M24C |
3-terminal 0.5A negative voltage regulator |
Samsung Electronic |
8891 |
MC79XX SERIES |
3-terminal 0.5A negative voltage regulator |
Samsung Electronic |
8892 |
MC79XXC SERIES |
3-terminal negative voltage regulator |
Samsung Electronic |
8893 |
MC79XXCT SERIES |
3-terminal 0.5A negative voltage regulator |
Samsung Electronic |
8894 |
MC79XXCT SERIES |
3-terminal negative voltage regulator |
Samsung Electronic |
8895 |
MJD127 |
PNP darlington transistor for high DC current gain, 100V, 8A |
Samsung Electronic |
8896 |
MJD127-1 |
PNP darlington transistor for high DC current gain, 100V, 8A |
Samsung Electronic |
8897 |
MJE170 |
-60 V, -3 A, PNP epitaxial silicon transistor |
Samsung Electronic |
8898 |
MJE171 |
-80 V, -1 A, PNP epitaxial silicon transistor |
Samsung Electronic |
8899 |
MJE172 |
-100 V, -1 A, PNP epitaxial silicon transistor |
Samsung Electronic |
8900 |
MJE180 |
60 V, 3 A, NPN epitaxial silicon transistor |
Samsung Electronic |
8901 |
MJE181 |
60 V, 3 A, NPN epitaxial silicon transistor |
Samsung Electronic |
8902 |
MJE182 |
60 V, 3 A, NPN epitaxial silicon transistor |
Samsung Electronic |
8903 |
MJE200 |
40 V, 5 A, NPN epitaxial silicon transistor |
Samsung Electronic |
8904 |
MJE210 |
-40 V, -5 A, PNP epitaxial silicon transistor |
Samsung Electronic |
8905 |
MJE2955T |
-70 V, -10 A, PNP silicon transistor |
Samsung Electronic |
8906 |
MJE3055T |
70 V, 10 A, NPN silicon transistor |
Samsung Electronic |
8907 |
MJE340 |
300 V, 500 A, NPN epitaxial silicon transistor |
Samsung Electronic |
8908 |
MJE350 |
-300 V, -500 A, PNP epitaxial silicon transistor |
Samsung Electronic |
8909 |
MJE700 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
8910 |
MJE701 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
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