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Datasheets for TAX

Datasheets found :: 15071
Page: | 293 | 294 | 295 | 296 | 297 | 298 | 299 | 300 | 301 |
No. Part Name Description Manufacturer
8881 GES2219A Planar epitaxial NPN silicon transistor. 40V, 800mA. General Electric Solid State
8882 GES2221 Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. General Electric Solid State
8883 GES2221A Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. General Electric Solid State
8884 GES2222 Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. General Electric Solid State
8885 GES2222A Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. General Electric Solid State
8886 GES2904 Planar epitaxial PNP silicon transistor. 40V, 600mA. General Electric Solid State
8887 GES2904A Planar epitaxial PNP silicon transistor. 60V, 600mA. General Electric Solid State
8888 GES2905 Planar epitaxial PNP silicon transistor. 40V, 600mA. General Electric Solid State
8889 GES2905A Planar epitaxial PNP silicon transistor. 60V, 600mA. General Electric Solid State
8890 GES2906 Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. General Electric Solid State
8891 GES2906A Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. General Electric Solid State
8892 GES2907 Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. General Electric Solid State
8893 GES2907A Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. General Electric Solid State
8894 GES5307 Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
8895 GES5308 Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
8896 GES5308A Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
8897 GES5810 Planar passivated epitaxial NPN silicon transistor. 25V, 750mA. General Electric Solid State
8898 GES5811 Planar passivated epitaxial PNP silicon transistor. -25V, -750mA. General Electric Solid State
8899 GES5812 Planar passivated epitaxial NPN silicon transistor. 25V, 750mA. General Electric Solid State
8900 GES5813 Planar passivated epitaxial PNP silicon transistor. -25V, -750mA. General Electric Solid State
8901 GES5814 Planar passivated epitaxial NPN silicon transistor. 40V, 750mA. General Electric Solid State
8902 GES5815 Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. General Electric Solid State
8903 GES5816 Planar passivated epitaxial NPN silicon transistor. 40V, 750mA. General Electric Solid State
8904 GES5817 Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. General Electric Solid State
8905 GES5818 Planar passivated epitaxial NPN silicon transistor. 40V, 750mA. General Electric Solid State
8906 GES5819 Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. General Electric Solid State
8907 GMA01U Epitaxial Planar Silicon Diode Very High-Speed Switching, Bias Stabilizing Applications SANYO
8908 GMA02 Silicon Epitaxial Planar Type Very High-Speed Switching Diode SANYO
8909 H1N5820 PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Microelectronics
8910 H2584 PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Microelectronics


Datasheets found :: 15071
Page: | 293 | 294 | 295 | 296 | 297 | 298 | 299 | 300 | 301 |



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