| No. |
Part Name |
Description |
Manufacturer |
| 8911 |
K4R271669B-N(M)CG6 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 8912 |
K4R271669B-N(M)CK7 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 8913 |
K4R271669B-NB(M)CCK8 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 8914 |
K4R271669B-NCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
| 8915 |
K4R271669B-NCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz |
Samsung Electronic |
| 8916 |
K4R271669B-NCK8 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz |
Samsung Electronic |
| 8917 |
K4R271669D |
Direct RDRAM� Data Sheet |
Samsung Electronic |
| 8918 |
K4R271669D-T |
128Mbit RDRAM(D-die) |
Samsung Electronic |
| 8919 |
K4R271669D-TCS8 |
128Mbit RDRAM(D-die) |
Samsung Electronic |
| 8920 |
K4R271669E |
128Mbit RDRAM(E-die) |
Samsung Electronic |
| 8921 |
K4R271669F |
128Mbit RDRAM(F-die) |
Samsung Electronic |
| 8922 |
K4R271869B-MCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
| 8923 |
K4R271869B-MCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
| 8924 |
K4R271869B-MCK8 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
| 8925 |
K4R271869B-NCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
| 8926 |
K4R271869B-NCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
| 8927 |
K4R271869B-NCK8 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
| 8928 |
K4R441869A |
Direct RDRAM |
Samsung Electronic |
| 8929 |
K4R441869A-N(M) |
K4R271669A-N(M):Direct RDRAM� Data Sheet |
Samsung Electronic |
| 8930 |
K4R441869A-N(M)CG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 8931 |
K4R441869A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 8932 |
K4R441869A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 8933 |
K4R441869AM-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 8934 |
K4R441869AM-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 8935 |
K4R441869AM-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 8936 |
K4R441869AN-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 8937 |
K4R441869AN-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 8938 |
K4R441869AN-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 8939 |
K4R441869B |
Direct RDRAM |
Samsung Electronic |
| 8940 |
K4R441869B |
K4R271669B:Direct RDRAM� Data Sheet |
Samsung Electronic |
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