| No. |
Part Name |
Description |
Manufacturer |
| 8941 |
BD8157EFV |
Single-channel Source Voltage Output Power Supply ICs with Gamma Buffer Amp |
ROHM |
| 8942 |
BD8157EFV-E2 |
Single-channel Source Voltage Output Power Supply ICs with Gamma Buffer Amp |
ROHM |
| 8943 |
BD8162AEKV |
Multi-channel System Power Supply IC + Gamma Buffer |
ROHM |
| 8944 |
BDP947 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 8945 |
BDP948 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 8946 |
BDP949 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 8947 |
BDP950 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 8948 |
BDP951 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 8949 |
BDP952 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 8950 |
BDP953 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 8951 |
BDP954 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 8952 |
BDP955 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 8953 |
BDP956 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
Siemens |
| 8954 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 8955 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 8956 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 8957 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 8958 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 8959 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 8960 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 8961 |
BF1102 |
Dual N-channel dual gate MOS-FETs |
Philips |
| 8962 |
BF1102R |
Dual N-channel dual gate MOS-FETs |
Philips |
| 8963 |
BF1107 |
N-channel single gate MOS-FETs |
Philips |
| 8964 |
BF1107W |
N-channel single gate MOS-FETs |
Philips |
| 8965 |
BF1203 |
Dual N-channel dual gate MOS-FET |
Philips |
| 8966 |
BF1204 |
Dual N-channel dual gate MOS-FET |
Philips |
| 8967 |
BF1205 |
Dual N-channel dual gate MOS-FET |
Philips |
| 8968 |
BF1205C |
Dual N-channel dual gate MOS-FET |
Philips |
| 8969 |
BF1208 |
Dual N-channel dual gate MOSFET |
Philips |
| 8970 |
BF166 |
Epitaxial planar NPN transistor designed to be used as a gain-controlled VHF amplifier |
SGS-ATES |
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