No. |
Part Name |
Description |
Manufacturer |
8941 |
3820 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
8942 |
383-2UBC |
5.0mm Round Type LED Lamps |
Everlight Electronics |
8943 |
383-2UBC-C470 |
5.0mm Round Type LED Lamps |
Everlight Electronics |
8944 |
3850 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
8945 |
3886GROUP |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
8946 |
38C1 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
8947 |
38C2 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER������ |
Mitsubishi Electric Corporation |
8948 |
3C-2000M-1 |
2 GHz Band Power Dividers/Combiners |
Hirose Electric |
8949 |
3C91C |
Optoelectronic coupling element (Optocoupler) |
TELEFUNKEN |
8950 |
3C92C |
Optoelectronic coupling element (Optocoupler) |
TELEFUNKEN |
8951 |
3CV-CJ |
RFCO-AXIAL CONNECTORS |
Hirose Electric |
8952 |
3CV-CP |
RFCO-AXIAL CONNECTORS |
Hirose Electric |
8953 |
3EZ100 |
100 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
8954 |
3EZ100D |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
8955 |
3EZ100D1 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
8956 |
3EZ100D10 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
8957 |
3EZ100D2 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
8958 |
3EZ100D3 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
8959 |
3EZ100D4 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
8960 |
3EZ100D5 |
3W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
8961 |
3EZ10D5 |
3W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
8962 |
3EZ110 |
110 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
8963 |
3EZ110D |
3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
8964 |
3EZ110D1 |
3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
8965 |
3EZ110D10 |
3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
8966 |
3EZ110D2 |
3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
8967 |
3EZ110D3 |
3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
8968 |
3EZ110D4 |
3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
8969 |
3EZ110D5 |
3W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
8970 |
3EZ11D5 |
3W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
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