| No. |
Part Name |
Description |
Manufacturer |
| 8971 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 8972 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 8973 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 8974 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 8975 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 8976 |
BF222 |
Epitaxial planar NPN transistor, designed for tuners of FM receivers, and features low noise, high gain and excelent forward AGC |
SGS-ATES |
| 8977 |
BF272A |
Epitaxial planar PNP transistor designed for RF stages of UHF-VHF tuners, high gain, low feedback capacitance, low noise |
SGS-ATES |
| 8978 |
BF272S |
Epitaxial planar PNP transistor designed for UHF-VHF low noise amplifier, high gain, low feedback capacitance |
SGS-ATES |
| 8979 |
BF357S |
Epitaxial planar NPN transistor, very low noise, high gain and good intermodulation properties |
SGS-ATES |
| 8980 |
BF901 |
Silicon n-channel dual gate MOS-FETs |
Philips |
| 8981 |
BF901R |
Silicon n-channel dual gate MOS-FETs |
Philips |
| 8982 |
BF904 |
N-channel dual gate MOS-FETs |
Philips |
| 8983 |
BF904A |
N-channel dual gate MOS-FETs |
Philips |
| 8984 |
BF904AR |
N-channel dual gate MOS-FETs |
Philips |
| 8985 |
BF904AWR |
N-channel dual gate MOS-FETs |
Philips |
| 8986 |
BF904R |
N-channel dual gate MOS-FETs |
Philips |
| 8987 |
BF909 |
N-channel dual gate MOS-FETs |
Philips |
| 8988 |
BF909R |
N-channel dual gate MOS-FETs |
Philips |
| 8989 |
BF960 |
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE |
Vishay |
| 8990 |
BF961 |
Dual gate, discharge mode, MOS field controlled tetrode |
Mikroelektronikai Vallalat |
| 8991 |
BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
TEMIC |
| 8992 |
BF961 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 8993 |
BF961A |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 8994 |
BF961B |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 8995 |
BF964 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 8996 |
BF964S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 8997 |
BF966S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 8998 |
BF981 |
SILICON N-CHANNEL DUAL GATE MOS-FET |
Philips |
| 8999 |
BF982 |
V(ds): 20V; I(d): 40mA; 225mW; silicon N-channel dual gate MOS-FET |
Philips |
| 9000 |
BF982 |
SILICON N-CHANNEL DUAL GATE MOS-FET |
Unknow |
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