| No. |
Part Name |
Description |
Manufacturer |
| 9001 |
MKT-MF05A |
MOLDED SOT-23 115 X 063 X 040 IN BODY 5LD 0375 IN PITCH |
National Semiconductor |
| 9002 |
MMBF0201NLT1-D |
Power MOSFET 300 mAmps, 20 Volts N-Channel SOT-23 |
ON Semiconductor |
| 9003 |
MMBF0202PLT1-D |
Power MOSFET 300 mAmps, 20 Volts P-Channel SOT-23 |
ON Semiconductor |
| 9004 |
MMBF170LT1-D |
Power MOSFET 500 mAmps, 60 Volts N-Channel SOT-23 |
ON Semiconductor |
| 9005 |
MMBR571L |
Trans GP BJT NPN 10V 0.08A 3-Pin SOT-23 T/R |
New Jersey Semiconductor |
| 9006 |
MMBR911L |
Trans GP BJT NPN 12V 0.06A 3-Pin SOT-23 |
New Jersey Semiconductor |
| 9007 |
MMBR920L |
Trans GP BJT NPN 15V 0.035A 3-Pin SOT-23 |
New Jersey Semiconductor |
| 9008 |
MMBR931L |
Trans GP BJT NPN 5V 0.005A 3-Pin SOT-23 |
New Jersey Semiconductor |
| 9009 |
MMBR941L |
Trans GP BJT NPN 10V 0.05A 3-Pin SOT-23 |
New Jersey Semiconductor |
| 9010 |
MMBR951L |
Trans GP BJT NPN 10V 0.1A 3-Pin SOT-23 |
New Jersey Semiconductor |
| 9011 |
MMBT2222A |
NPN Epitaxial Silicon Transistor, SOT-23 case marking 1P |
Samsung Electronic |
| 9012 |
MMBT2484 |
Trans GP BJT NPN 60V 0.1A 3-Pin SOT-23 T/R |
New Jersey Semiconductor |
| 9013 |
MMBT2484 |
NPN Epitaxial Silicon Transistor, SOT-23 case, marking 1U |
Samsung Electronic |
| 9014 |
MMBT3904 |
NPN Epitaxial Silicon Transistor, SOT-23 case marking 1A |
Samsung Electronic |
| 9015 |
MMBT3906 |
PNP Epitaxial Silicon Transistor, SOT-23 case marking 2A |
Samsung Electronic |
| 9016 |
MMBT4401 |
NPN Epitaxial Silicon Transistor, SOT-23 case marking 2X |
Samsung Electronic |
| 9017 |
MMBT4403 |
PNP Epitaxial Silicon Transistor, SOT-23 case marking 2T |
Samsung Electronic |
| 9018 |
MMBT5401 |
PNP Epitaxial Silicon Transistor, SOT-23 case marking 2L |
Samsung Electronic |
| 9019 |
MMBT918 |
Trans GP BJT NPN 15V 0.05A 3-Pin SOT-23 T/R |
New Jersey Semiconductor |
| 9020 |
MMBTA05 |
NPN Epitaxial Silicon Transistor, SOT-23 case, marking 1H |
Samsung Electronic |
| 9021 |
MMBTA06 |
NPN Epitaxial Silicon Transistor, case SOT-23 marking 1G |
Samsung Electronic |
| 9022 |
MMBTA43 |
NPN Epitaxial Silicon Transistor, SOT-23 case marking with 1E |
Samsung Electronic |
| 9023 |
MMBV2101 |
Voltage-variable capacitance diode (VVC) 30V, SOT-23 package, SMD marking 4G |
Motorola |
| 9024 |
MMBV2102 |
Voltage-variable capacitance diode (VVC) 30V, SOT-23 package, SMD marking 4Y |
Motorola |
| 9025 |
MMBV2103 |
Voltage-variable capacitance diode (VVC) 30V, SOT-23 package, SMD marking 4H |
Motorola |
| 9026 |
MMBV2104 |
Voltage-variable capacitance diode (VVC) 30V, SOT-23 package, SMD marking 4Z |
Motorola |
| 9027 |
MMBV2105 |
Voltage-variable capacitance diode (VVC) 30V, SOT-23 package, SMD marking 4U |
Motorola |
| 9028 |
MMBV2106 |
Voltage-variable capacitance diode (VVC) 30V, SOT-23 package, SMD marking 4V |
Motorola |
| 9029 |
MMBV2107 |
Voltage-variable capacitance diode (VVC) 30V, SOT-23 package, SMD marking 4W |
Motorola |
| 9030 |
MMBV2108 |
Voltage-variable capacitance diode (VVC) 30V, SOT-23 package, SMD marking 4X |
Motorola |
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