| No. |
Part Name |
Description |
Manufacturer |
| 9001 |
LTC3109EUF#PBF |
Auto-Polarity, Ultralow Voltage Step-Up Converter and Power Manager |
Linear Technology |
| 9002 |
LTC3109EUF#TRPBF |
Auto-Polarity, Ultralow Voltage Step-Up Converter and Power Manager |
Linear Technology |
| 9003 |
LTC3109IGN#PBF |
Auto-Polarity, Ultralow Voltage Step-Up Converter and Power Manager |
Linear Technology |
| 9004 |
LTC3109IGN#TRPBF |
Auto-Polarity, Ultralow Voltage Step-Up Converter and Power Manager |
Linear Technology |
| 9005 |
LTC3109IUF#PBF |
Auto-Polarity, Ultralow Voltage Step-Up Converter and Power Manager |
Linear Technology |
| 9006 |
LTC3109IUF#TRPBF |
Auto-Polarity, Ultralow Voltage Step-Up Converter and Power Manager |
Linear Technology |
| 9007 |
M3100 |
100V; 3.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
Diodes |
| 9008 |
M370 |
70V; 3.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
Diodes |
| 9009 |
M380 |
80V; 3.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
Diodes |
| 9010 |
M390 |
90V; 3.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
Diodes |
| 9011 |
M57115L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9012 |
M57116L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9013 |
M57120L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9014 |
M57140-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9015 |
M57145L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9016 |
M57146U-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9017 |
M57147AU-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9018 |
M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9019 |
M57175L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9020 |
M57184N-715 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9021 |
M57716M |
Silicon Bipolar Power Amplifier for 410-430 MHz 13W Digital Mobile |
Mitsubishi Electric Corporation |
| 9022 |
M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9023 |
M57962L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9024 |
M68762SL |
Silicon Bipolar Power Amplifier, 350-400MHz 30W FM Mobile |
Mitsubishi Electric Corporation |
| 9025 |
MARKING |
Product marking - β manufacturer s identifications mark or symbol comercial code, polarity, quality level code |
IPRS Baneasa |
| 9026 |
MAX11152 |
18-Bit, 500ksps, +5V Unipolar Input, SAR ADC, in Tiny 10-Pin µMAX |
MAXIM - Dallas Semiconductor |
| 9027 |
MAX11152EUB+ |
18-Bit, 500ksps, +5V Unipolar Input, SAR ADC, in Tiny 10-Pin µMAX |
MAXIM - Dallas Semiconductor |
| 9028 |
MAX11152EUB+T |
18-Bit, 500ksps, +5V Unipolar Input, SAR ADC, in Tiny 10-Pin µMAX |
MAXIM - Dallas Semiconductor |
| 9029 |
MAX11162 |
16-Bit, 500ksps, +5V Unipolar Input, SAR ADC, in Tiny 10-Pin µMAX |
MAXIM - Dallas Semiconductor |
| 9030 |
MAX11162ETB+ |
16-Bit, 500ksps, +5V Unipolar Input, SAR ADC, in Tiny 10-Pin µMAX |
MAXIM - Dallas Semiconductor |
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