| No. |
Part Name |
Description |
Manufacturer |
| 901 |
S50/L1 |
Spannkappe - clamp for BStL61 series |
Siemens |
| 902 |
S5C7212X |
TIMING & SYNC. GENERATOR FOR B/W CCD |
Samsung Electronic |
| 903 |
S5C7212X01 |
TIMING & SYNC. GENERATOR FOR B/W CCD |
Samsung Electronic |
| 904 |
S5C7212X01-E0R0 |
TIMING & SYNC. GENERATOR FOR B/W CCD |
Samsung Electronic |
| 905 |
S5C7214X01 |
TIMING & SYNC. GENERATOR FOR B/W CCD |
Samsung Electronic |
| 906 |
S5C7214X01-E0R0 |
TIMING & SYNC. GENERATOR FOR B/W CCD |
Samsung Electronic |
| 907 |
S5C7221X |
TIMING & SYNC. GENERATOR FOR B/W CCD |
Samsung Electronic |
| 908 |
S5C7221X01 |
TIMING & SYNC. GENERATOR FOR B/W CCD |
Samsung Electronic |
| 909 |
S5C7221X01-V0B0 |
TIMING & SYNC. GENERATOR FOR B/W CCD |
Samsung Electronic |
| 910 |
S5C7221X01-V0T0 |
TIMING & SYNC. GENERATOR FOR B/W CCD |
Samsung Electronic |
| 911 |
S5T0167 |
DTMF DIALER FOR BINARY DATA-IN |
Samsung Electronic |
| 912 |
S5T0167X01 |
DTMF DIALER FOR BINARY DATA-IN Data Sheet |
Samsung Electronic |
| 913 |
S5T0167X01-D0B0 |
DTMF DIALER FOR BINARY DATA-IN |
Samsung Electronic |
| 914 |
S5T0167X01-S0B0 |
DTMF DIALER FOR BINARY DATA-IN |
Samsung Electronic |
| 915 |
S61/L1 |
Spannkappe - clamp for BStL44, BStL45, BStL47 series |
Siemens |
| 916 |
S61/N1 |
Spannkappe - clamp for BStN44, BStN45, BStN47, BStN61 series |
Siemens |
| 917 |
SA10(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 918 |
SA100 |
100.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 919 |
SA100(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 920 |
SA100A |
100.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 921 |
SA1088 |
FM receiver circuit for battery supply for use in mono portable and pocket radios |
Silan Semiconductors |
| 922 |
SA11(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 923 |
SA110 |
110.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 924 |
SA110(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 925 |
SA110A |
110.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 926 |
SA12(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 927 |
SA120 |
120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 928 |
SA120(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 929 |
SA120A |
120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 930 |
SA13(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
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