| No. |
Part Name |
Description |
Manufacturer |
| 901 |
15KPA90C |
Diode TVS Single Bi-Dir 90V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 902 |
15KPA90CA |
Diode TVS Single Bi-Dir 90V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 903 |
15P1 |
Gold bounded germanium signal diode - general purpose |
SESCOSEM |
| 904 |
15P2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 905 |
16P1 |
Gold bounded germanium signal diode - general purpose |
SESCOSEM |
| 906 |
16P2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 907 |
174CQY |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 908 |
17P2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 909 |
180T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 910 |
181T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 911 |
182T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 912 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 913 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 914 |
183T2 |
180V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
| 915 |
184T2 |
200V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
| 916 |
185T2 |
250V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
| 917 |
1893 |
1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
| 918 |
18P2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 919 |
194D |
Solid Tantalum Chip Capacitors, Conformal, High Reliability, MIDGET® Solid-Electrolyte, New Extended Range, Minimum Size |
Vishay |
| 920 |
195D |
Solid Tantalum Chip Capacitors, Conformal, Industrial Grade, TANTAMOUNT® Tantalum Chips with Conformal Terminals, Minimum size, Meets IEC Specification QC300801/US0002, 2 Standard Electroplate Terminations |
Vishay |
| 921 |
19MT050XF |
500V Single N-Channel HEXFET Power MOSFET in a MTP package |
International Rectifier |
| 922 |
19P1 |
Gold bounded germanium signal diode - switching |
SESCOSEM |
| 923 |
19P2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 924 |
1A1 |
1.0 AMP SILICON RECTIFIERS |
Bytes |
| 925 |
1A1 |
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER |
DC Components |
| 926 |
1A1 |
1.0 AMP SILICON RECTIFIERS |
Formosa MS |
| 927 |
1A1 |
1 Amp Miniature Plastic Silicon Rectifier 50 to 1000 Volts |
Micro Commercial Components |
| 928 |
1A1 |
MINIATURE PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 929 |
1A1 |
1.0A MINIATURE SILICON RECTIFIER |
Won-Top Electronics |
| 930 |
1A1-T3 |
1.0A MINIATURE SILICON RECTIFIER |
Won-Top Electronics |
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