| No. |
Part Name |
Description |
Manufacturer |
| 901 |
NLAST4599DFT2 |
Single SPDT Analog Switch Single Supply, TTL Level |
ON Semiconductor |
| 902 |
NLAST4599DTT1 |
Single SPDT Analog Switch Single Supply, TTL Level |
ON Semiconductor |
| 903 |
NLAST4599DTT1 |
Single SPDT Analog Switch Single Supply, TTL Level |
ON Semiconductor |
| 904 |
NSP599 |
NPN Power Transistor TO-220 |
National Semiconductor |
| 905 |
NSP599 |
NPN Epitaxial Power Transistor |
National Semiconductor |
| 906 |
NTE599 |
Silicon Rectifier Ultra Fast, 200V, 15A |
NTE Electronics |
| 907 |
NTE5990 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. |
NTE Electronics |
| 908 |
NTE5991 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. |
NTE Electronics |
| 909 |
NTE5992 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 40A. |
NTE Electronics |
| 910 |
NTE5993 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 40A. |
NTE Electronics |
| 911 |
NTE5994 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 40A. |
NTE Electronics |
| 912 |
NTE5995 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 40A. |
NTE Electronics |
| 913 |
NTE5998 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 40A. |
NTE Electronics |
| 914 |
NTE5999 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 40A. |
NTE Electronics |
| 915 |
NX8562LB997-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1599.74 nm. Frequency 187.40 THz. Anode ground. FC-PC connector. |
NEC |
| 916 |
NX8562LF997-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1599.74 nm. Frequency 187.40 THz. Anode floating. FC-PC connector. |
NEC |
| 917 |
NX8563LB997-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1599.74 nm. Frequency 187.40 THz. FC-PC connector. Anode ground. |
NEC |
| 918 |
NX8563LF997-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1599.74 nm. Frequency 187.40 THz. FC-PC connector. Anode floating. |
NEC |
| 919 |
OP599 |
NPN Plastic Silicon Phototransistors |
Optek Technology |
| 920 |
OP599A |
NPN Plastic Silicon Phototransistors |
Optek Technology |
| 921 |
OP599B |
NPN Plastic Silicon Phototransistors |
Optek Technology |
| 922 |
OP599C |
NPN Plastic Silicon Phototransistors |
Optek Technology |
| 923 |
OP599D |
NPN Plastic Silicon Phototransistors |
Optek Technology |
| 924 |
PI5A4599A |
SOTINY Low Resistance, Low-Voltage Single-Supply SPDT Switch |
Pericom Technology |
| 925 |
PI5A4599ACX |
SOTINY Low Resistance, Low-Voltage Single-Supply SPDT Switch |
Pericom Technology |
| 926 |
PI5A4599ATX |
Low resistance, low-voltage single-supply SPDT switch |
Pericom Technology |
| 927 |
Q62702-B599 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 928 |
Q62703-Q1599 |
Light Emltting Diodes |
Siemens |
| 929 |
SF_2N5599 |
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 930 |
SK1599 |
1:5 Signal Distribution |
Semtech |
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