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Datasheets for C41

Datasheets found :: 1646
Page: | 27 | 28 | 29 | 30 | 31 | 32 | 33 | 34 | 35 |
No. Part Name Description Manufacturer
901 KM416C4104CS-5 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 4K refresh, 50ns Samsung Electronic
902 KM416C4104CS-6 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 4K refresh, 60ns Samsung Electronic
903 KM44C4100C 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
904 KM44C4100CK-5 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
905 KM44C4100CK-6 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
906 KM44C4100CKL-5 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
907 KM44C4100CKL-6 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
908 KM44C4100CS-5 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
909 KM44C4100CS-6 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
910 KM44C4100CSL-5 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
911 KM44C4100CSL-6 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
912 KM44C4103C 4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode Samsung Electronic
913 KM44C4103CK-5 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns Samsung Electronic
914 KM44C4103CK-6 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns Samsung Electronic
915 KM44C4103CKL-5 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns Samsung Electronic
916 KM44C4103CKL-6 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns Samsung Electronic
917 KM44C4103CS-5 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns Samsung Electronic
918 KM44C4103CS-6 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns Samsung Electronic
919 KM44C4103CSL-5 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns Samsung Electronic
920 KM44C4103CSL-6 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns Samsung Electronic
921 KM44C4104A-5 50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
922 KM44C4104A-6 60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
923 KM44C4104A-7 70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
924 KM44C4104A-8 80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
925 KM44C4104AL-5 50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
926 KM44C4104AL-6 60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
927 KM44C4104AL-7 70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
928 KM44C4104AL-8 80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
929 KM44C4104ALL-5 50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
930 KM44C4104ALL-6 60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic


Datasheets found :: 1646
Page: | 27 | 28 | 29 | 30 | 31 | 32 | 33 | 34 | 35 |



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