| No. |
Part Name |
Description |
Manufacturer |
| 901 |
2SC6125 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 902 |
2SC6126 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 903 |
2SC6127 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 904 |
2SC6140 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 905 |
2SC6142 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 906 |
2SC689H |
Silicon NPN Epitaxial Planar Transistor, intended for use in High Speed Switching |
Hitachi Semiconductor |
| 907 |
2SC71 |
High-Speed Switching Transistor |
TOSHIBA |
| 908 |
2SC72 |
High-Speed Switching Transistor |
TOSHIBA |
| 909 |
2SC752(G)TM |
Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter Applications |
TOSHIBA |
| 910 |
2SC752G |
Silicon NPN epitaxial planar transistor, ultra high speed switching, computer, countor applications fT=400MHz |
TOSHIBA |
| 911 |
2SC752GTM |
Ultra High Speed Switching Applications Computer, Counter Applications |
TOSHIBA |
| 912 |
2SC752TM |
Ultra High Speed Switching Applications Computer, Counter Applications |
TOSHIBA |
| 913 |
2SC89H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 914 |
2SC907AH |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 915 |
2SC907H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 916 |
2SC90H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 917 |
2SC91H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 918 |
2SC945 |
NPN Silicon Transistor(AF amplifier and low speed switching) |
NEC |
| 919 |
2SC984H |
Silicon NPN Epitaxial LTP transistor, intended for use in Medium Speed Switching and Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 920 |
2SD1026 |
Low-speed switching Darlington transistor |
Shindengen |
| 921 |
2SD1027 |
Low-speed switching Darlington transistor |
Shindengen |
| 922 |
2SD1049 |
TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED SWITCHING |
Fuji Electric |
| 923 |
2SD1118 |
TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING |
Fuji Electric |
| 924 |
2SD1157 |
TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHOING |
Fuji Electric |
| 925 |
2SD1158 |
TRIPLE DIFFUSED PLANER TYPE HIGH SPPED SWITCHING |
Unknow |
| 926 |
2SD1176 |
Si NPN triple diffused planar darlington. Medium speed switching. |
Panasonic |
| 927 |
2SD1176A |
Si NPN triple diffused planar darlington. Medium speed switching. |
Panasonic |
| 928 |
2SD1212 |
NPN Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching Applications |
SANYO |
| 929 |
2SD1213 |
NPN Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching Applications |
SANYO |
| 930 |
2SD1235 |
NPN Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications |
SANYO |
| | | |
