| No. |
Part Name |
Description |
Manufacturer |
| 901 |
BU406 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 902 |
BU406 |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 903 |
BU406D |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 904 |
BU406H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 905 |
BU406H |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 906 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 907 |
BU406TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 908 |
BU407 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 909 |
BU407 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 910 |
BU407H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 911 |
BU407H |
330 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 912 |
BU407HTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 913 |
BU407TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 914 |
BU408 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 915 |
BU408 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 916 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 917 |
BU806 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 918 |
BU806 |
400 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 919 |
BU807 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 920 |
BU807 |
400 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 921 |
BU807TU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 922 |
BUT56A |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 923 |
BYW51-100 |
Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 100V. |
General Electric Solid State |
| 924 |
BYW51-150 |
Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 150V. |
General Electric Solid State |
| 925 |
BYW51-200 |
Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 200V. |
General Electric Solid State |
| 926 |
C30737 |
Epitaxial Silicon Avalanche Photodiode |
PerkinElmer Optoelectronics |
| 927 |
C30737E-230 |
Epitaxial Silicon Avalanche Photodiode |
PerkinElmer Optoelectronics |
| 928 |
C30737E-500 |
Epitaxial Silicon Avalanche Photodiode |
PerkinElmer Optoelectronics |
| 929 |
C30737P-230 |
Epitaxial Silicon Avalanche Photodiode |
PerkinElmer Optoelectronics |
| 930 |
C30737P-500 |
Epitaxial Silicon Avalanche Photodiode |
PerkinElmer Optoelectronics |
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