No. |
Part Name |
Description |
Manufacturer |
901 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
902 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
903 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
904 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
905 |
2N6322 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
906 |
2N6324 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
907 |
2N6420 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
908 |
2N6420 |
Complementary Medium-Power High Voltage Power Transistor 35W 1A |
Motorola |
909 |
2N6421 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
910 |
2N6421 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
911 |
2N6422 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
912 |
2N6422 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
913 |
2N6423 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
914 |
2N6423 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
915 |
2N6497 |
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
916 |
2N6497 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
917 |
2N6497-D |
High Voltage NPN Silicon Power Transistors |
ON Semiconductor |
918 |
2N6498 |
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
919 |
2N6498 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
920 |
2N6499 |
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
921 |
2N6499 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
922 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
923 |
2N6515 |
High Voltage Transistor 625mW |
Micro Commercial Components |
924 |
2N6515 |
High Voltage Transistors |
ON Semiconductor |
925 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
926 |
2N6515-D |
High Voltage Transistors |
ON Semiconductor |
927 |
2N6515RLRM |
High Voltage Transistors |
ON Semiconductor |
928 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
929 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
930 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
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