| No. |
Part Name |
Description |
Manufacturer |
| 901 |
1N5546CUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 902 |
1N5546CUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 903 |
1N5546D |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 904 |
1N5546D-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 905 |
1N5546D-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 906 |
1N5546DUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 907 |
1N5546DUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 908 |
1N6082 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 909 |
1N6083 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 910 |
1N6084 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 911 |
1N6085 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 912 |
1N6086 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 913 |
1N6087 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 914 |
1N6088 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 915 |
1N6089 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 916 |
1N6090 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 917 |
1N6091 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 918 |
1NE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 1000V |
TOSHIBA |
| 919 |
1QE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 1200V |
TOSHIBA |
| 920 |
1S1417 |
Controlled avalanche silicon rectifier 25A |
TOSHIBA |
| 921 |
1S1418 |
Controlled avalanche silicon rectifier 25A |
TOSHIBA |
| 922 |
1S1419 |
Controlled avalanche silicon rectifier 25A |
TOSHIBA |
| 923 |
1S1461 |
Controlled avalanche silicon rectifier 12A |
TOSHIBA |
| 924 |
1S1462 |
Controlled avalanche silicon rectifier 12A |
TOSHIBA |
| 925 |
1S1463 |
Controlled avalanche silicon rectifier 12A |
TOSHIBA |
| 926 |
200D,202D |
Wet Tantalum Capacitors, Wet Sintered Anode Components, Capacitor Assemblies, Type 202D Designed to Meet the Performance and Marking Requirements of Military Style CL55 in Accordance with MIL-DTL-3965 |
Vishay |
| 927 |
20PM4AC |
20A Single Phase Avalanche Controlled Rectifier Bridge 400V |
IPRS Baneasa |
| 928 |
20PM6AC |
20A Single Phase Avalanche Controlled Rectifier Bridge 600V |
IPRS Baneasa |
| 929 |
20PM8AC |
20A Single Phase Avalanche Controlled Rectifier Bridge 800V |
IPRS Baneasa |
| 930 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
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