| No. |
Part Name |
Description |
Manufacturer |
| 901 |
2SC2715 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications |
TOSHIBA |
| 902 |
2SC2716 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 903 |
2SC2717 |
Transistor Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier Applications |
TOSHIBA |
| 904 |
2SC2732 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 905 |
2SC2734 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 906 |
2SC2735 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 907 |
2SC2736 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 908 |
2SC2753 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
| 909 |
2SC2756 |
NPN silicon epitaxial transistor, VHF mixer |
NEC |
| 910 |
2SC2756R |
NPN silicon epitaxial transistor, VHF mixer |
NEC |
| 911 |
2SC2757 |
NPN silicon epitaxial transistor for UHF/VHF oscillator and VHF mixer |
NEC |
| 912 |
2SC2757R |
NPN silicon epitaxial transistor for UHF/VHF oscillator and VHF mixer |
NEC |
| 913 |
2SC2759R |
NPN silicon epitaxial transistor for UHF/VHF mixer, UHF oscillator |
NEC |
| 914 |
2SC2776 |
Silicon NPN Epitaxial Planar |
Hitachi Semiconductor |
| 915 |
2SC2780 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 916 |
2SC2782 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 917 |
2SC2797 |
NPN epitaxial planar RF power UHF transistor 5W 24V |
Mitsubishi Electric Corporation |
| 918 |
2SC2798 |
NPN epitaxial planar RF power UHF transistor 12W 24V |
Mitsubishi Electric Corporation |
| 919 |
2SC2799 |
NPN epitaxial planar RF power UHF transistor 25W 24V |
Mitsubishi Electric Corporation |
| 920 |
2SC280H |
Silicon NPN Epitaxial LTP Twin Transistor, intended for use in DC Amplifier |
Hitachi Semiconductor |
| 921 |
2SC281 |
Silicon NPN Epitaxial LTP Transistor Vcbo=30V, Pc=200mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 922 |
2SC2814 |
NPN Epitaxial Planar Silicon Transistor High-Friquency General-Purpose Amplifier Applications |
SANYO |
| 923 |
2SC281H |
Silicon NPN Epitaxial LTP Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 924 |
2SC2824 |
SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
TOSHIBA |
| 925 |
2SC282H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
| 926 |
2SC283 |
Silicon NPN Epitaxial LTP Transistor Vcbo=50V, Pc=350mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 927 |
2SC2839 |
NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications |
SANYO |
| 928 |
2SC283H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier |
Hitachi Semiconductor |
| 929 |
2SC2840 |
NPN Epitaxial Planar Type Silicon Transistor |
SANYO |
| 930 |
2SC2845 |
SILICON NPN EPITAXIAL PLANAR |
Panasonic |
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