DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for R F

Datasheets found :: 42682
Page: | 27 | 28 | 29 | 30 | 31 | 32 | 33 | 34 | 35 |
No. Part Name Description Manufacturer
901 2N6619 12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application Siemens
902 2N6620 NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER Siemens
903 2N669 PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications Motorola
904 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
905 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
906 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
907 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
908 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
909 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
910 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
911 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
912 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
913 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
914 2N6781 60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET Topaz Semiconductor
915 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
916 2N6782 100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET Topaz Semiconductor
917 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
918 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State
919 2N697 NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) ITT Semiconductors
920 2N697 NPN Silicon Transistor for high level audio applications Newmarket Transistors NKT
921 2N700 PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications Motorola
922 2N7000 60 V, 5 ohm, N-channel enhancement-mode D-MOS power FET Topaz Semiconductor
923 2N700A PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications Motorola
924 2N705 PNP germanium mesa transistor for high-speed switching applications Motorola
925 2N706 Silicon NPN epitaxial planar transistor for high speed switching AEG-TELEFUNKEN
926 2N706 NPN Silicon transistor for switching applications IPRS Baneasa
927 2N706 NPN silicon annular switching transistor for high-speed switching applications Motorola
928 2N706 NPN Silicon Planar Transistor for high speed switching and high frequency use Newmarket Transistors NKT
929 2N706A NPN silicon annular switching transistor for high-speed switching applications Motorola
930 2N706A NPN Silicon Planar Transistor for high speed switching and high frequency use Newmarket Transistors NKT


Datasheets found :: 42682
Page: | 27 | 28 | 29 | 30 | 31 | 32 | 33 | 34 | 35 |



© 2024 - www Datasheet Catalog com