| No. |
Part Name |
Description |
Manufacturer |
| 901 |
2SD661A |
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
| 902 |
2SD661A |
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
| 903 |
2SD814 |
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) |
Panasonic |
| 904 |
2SD814 |
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) |
Panasonic |
| 905 |
2SK1069 |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 906 |
2SK1332 |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 907 |
2SK165 |
Si N-channel junction. Wide-band, low-noise amplifier. |
Panasonic |
| 908 |
2SK187 |
SILICON N-CHANNEL JUNCTION FET LOW FREQUECY LOW NOISE AMPLIFIER |
Hitachi Semiconductor |
| 909 |
2SK1961 |
N-Channel Junction Silicon FET High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 910 |
2SK2074 |
N-Channel Junction Silicon FET High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 911 |
2SK209 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 912 |
2SK2145 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 913 |
2SK2218 |
High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 914 |
2SK222 |
N-Channel Junction Silicon FET Low-Frequency, Low Noise Amplifier Applications |
SANYO |
| 915 |
2SK2331 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 916 |
2SK2332 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 917 |
2SK242 |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 918 |
2SK2497 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 919 |
2SK2856 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 920 |
2SK3001 |
GaAs HEMT Low Noise Amplifier |
Hitachi Semiconductor |
| 921 |
2SK303 |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 922 |
2SK3179 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 923 |
2SK880 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 924 |
2SK932 |
N-Channel Junction Silicon FET High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 925 |
2SK937 |
N-Channel Junction Silicon FET High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 926 |
3N161 |
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
Intersil |
| 927 |
3N163 |
P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch |
Calogic |
| 928 |
3N163 |
P-channel enchancement mode MOSFET general purpose amplifier/switch. |
Intersil |
| 929 |
3N164 |
P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch |
Calogic |
| 930 |
3N164 |
P-channel enchancement mode MOSFET general purpose amplifier/switch. |
Intersil |
| | | |
