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Datasheets for WER D

Datasheets found :: 9136
Page: | 299 | 300 | 301 | 302 | 303 | 304 | 305 |
No. Part Name Description Manufacturer
9061 V62/04646-01XE Enhanced Product Digital-To-Analog Converter With Power Down 8-SOIC -55 to 125 Texas Instruments
9062 V62/11620-01XE Enhanced Product Single-Channel Current-Limited Power Distribution Switch 5-SOT-23 -55 to 125 Texas Instruments
9063 V62/14601-01XE Digital Dual Synchronous-Buck Power Driver, UCD7242-EP 32-VQFN-HR -55 to 125 Texas Instruments
9064 V62/16605-01XE Low-Power Dual Digital Isolators 8-SOIC -55 to 125 Texas Instruments
9065 VSC7127R-QM Repeater and port bypass circuit for fibre channel. 3.3 power supply, 700mW power dissipation Vitesse Semiconductor Corporation
9066 VSC7127T-QM Retimer and port bypass circuit for fibre channel. 3.3 power supply, 700mW power dissipation Vitesse Semiconductor Corporation
9067 VSC7129R-QM Repeater and port bypass circuit for fibre channel. 3.3 power supply, 700mW power dissipation Vitesse Semiconductor Corporation
9068 VSC7129T-QM Retimer and port bypass circuit for fibre channel. 3.3 power supply, 700mW power dissipation Vitesse Semiconductor Corporation
9069 VSC7139TW Quad transceiver for fibre channel and Gigabit ethernet. 3.3V power supply, 2.67 W max power dissipation Vitesse Semiconductor Corporation
9070 VSC7226 Quad 10Gb/s backplane transceiver. 2.5V power supply, 2.1W power dissipation Vitesse Semiconductor Corporation
9071 VSC8171 SONET/SDH 16:1 Mux with CMU. 5.2V power supply, 2.6W power dissipation Vitesse Semiconductor Corporation
9072 VSC8172 SONET/SDH 1:16 Demux with CDR. 5.2V/2V power supply, 3.4W power dissipation Vitesse Semiconductor Corporation
9073 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9074 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9075 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9076 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9077 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9078 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9079 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9080 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9081 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9082 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9083 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9084 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9085 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9086 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9087 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9088 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9089 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9090 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER


Datasheets found :: 9136
Page: | 299 | 300 | 301 | 302 | 303 | 304 | 305 |



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