No. |
Part Name |
Description |
Manufacturer |
9061 |
V62/04646-01XE |
Enhanced Product Digital-To-Analog Converter With Power Down 8-SOIC -55 to 125 |
Texas Instruments |
9062 |
V62/11620-01XE |
Enhanced Product Single-Channel Current-Limited Power Distribution Switch 5-SOT-23 -55 to 125 |
Texas Instruments |
9063 |
V62/14601-01XE |
Digital Dual Synchronous-Buck Power Driver, UCD7242-EP 32-VQFN-HR -55 to 125 |
Texas Instruments |
9064 |
V62/16605-01XE |
Low-Power Dual Digital Isolators 8-SOIC -55 to 125 |
Texas Instruments |
9065 |
VSC7127R-QM |
Repeater and port bypass circuit for fibre channel. 3.3 power supply, 700mW power dissipation |
Vitesse Semiconductor Corporation |
9066 |
VSC7127T-QM |
Retimer and port bypass circuit for fibre channel. 3.3 power supply, 700mW power dissipation |
Vitesse Semiconductor Corporation |
9067 |
VSC7129R-QM |
Repeater and port bypass circuit for fibre channel. 3.3 power supply, 700mW power dissipation |
Vitesse Semiconductor Corporation |
9068 |
VSC7129T-QM |
Retimer and port bypass circuit for fibre channel. 3.3 power supply, 700mW power dissipation |
Vitesse Semiconductor Corporation |
9069 |
VSC7139TW |
Quad transceiver for fibre channel and Gigabit ethernet. 3.3V power supply, 2.67 W max power dissipation |
Vitesse Semiconductor Corporation |
9070 |
VSC7226 |
Quad 10Gb/s backplane transceiver. 2.5V power supply, 2.1W power dissipation |
Vitesse Semiconductor Corporation |
9071 |
VSC8171 |
SONET/SDH 16:1 Mux with CMU. 5.2V power supply, 2.6W power dissipation |
Vitesse Semiconductor Corporation |
9072 |
VSC8172 |
SONET/SDH 1:16 Demux with CDR. 5.2V/2V power supply, 3.4W power dissipation |
Vitesse Semiconductor Corporation |
9073 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9074 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9075 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9076 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9077 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9078 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9079 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9080 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9081 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9082 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9083 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9084 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9085 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9086 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9087 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9088 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9089 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9090 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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