| No. |
Part Name |
Description |
Manufacturer |
| 91 |
IRFP460 |
N - CHANNEL 500V - 0.22 Ohm - 20 A - TO-247 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 92 |
IRFZ40 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 93 |
IRFZ40FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 94 |
JV2N7227 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 400 Volt 0.315 Ohm |
Advanced Power Technology |
| 95 |
JV2N7228 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 500 Volt 0.415 Ohm |
Advanced Power Technology |
| 96 |
JX2N7227 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 400 Volt 0.315 Ohm |
Advanced Power Technology |
| 97 |
JX2N7228 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 500 Volt 0.415 Ohm |
Advanced Power Technology |
| 98 |
LX5111 |
ULTRA 9 - CHANNEL SCSI TERMINATOR |
Microsemi |
| 99 |
LX5111A |
ULT RA 9 - CHANNEL SCSI TERMINATOR |
Microsemi |
| 100 |
LX5112 |
ULTRA 9 - CHANNEL SCSI TERMINATOR |
Microsemi |
| 101 |
LX5112A |
ULT RA 9 - CHANNEL SCSI TERMINATOR |
Microsemi |
| 102 |
LX5115 |
ULTRA 9 - CHANNEL SCSI TERMINATOR |
Microsemi |
| 103 |
LX5115A |
ULTRA 9 - CHANNEL SCSI TERMINATOR |
Microsemi |
| 104 |
LX5219 |
ULTRA 9 - CHANNEL SCSI TERMINATOR |
Microsemi |
| 105 |
M089 |
Technical Note 138 - Characterization of audio parameters of the M089 |
SGS-ATES |
| 106 |
MMBF170_NL |
N - Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 107 |
MTP3055 |
N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET |
ST Microelectronics |
| 108 |
MTP3055E |
N - CHANNEL 60V - 0.1Ohm - 12A TO-220 STripFET MOSFET |
SGS Thomson Microelectronics |
| 109 |
MTP3N60 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 110 |
MTP3N60FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 111 |
MTP6N60 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 112 |
NTJD4001N |
Small Signal MOSFET 30 V, 250 mA, Dual N - Channel, SC - 88 |
ON Semiconductor |
| 113 |
NTJD4001NT1 |
Small Signal MOSFET 30 V, 250 mA, Dual N - Channel, SC - 88 |
ON Semiconductor |
| 114 |
NTJD4001NT1G |
Small Signal MOSFET 30 V, 250 mA, Dual N - Channel, SC - 88 |
ON Semiconductor |
| 115 |
P16NE |
N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET |
ST Microelectronics |
| 116 |
P16NE |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET |
ST Microelectronics |
| 117 |
SDM8401 |
30V; 6A; 2.0W; dual enchanced mode field effect transistor (N and P - channel) |
SamHop Microelectronics Corp. |
| 118 |
SDM9435A |
30V; 5.3A; 2.5W; dual enchanced mode field effect transistor (N and P - channel) |
SamHop Microelectronics Corp. |
| 119 |
STB10NA40 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 120 |
STB10NB20 |
N - CHANNEL 200V - 0.30Ohm - 10A - D 2 PAK PowerMESH MOSFET |
SGS Thomson Microelectronics |
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