No. |
Part Name |
Description |
Manufacturer |
91 |
MPXL10GC7U |
0 to 10 kPa (0-1.45 psi) 35 mV FULL SCALE SPAN (TYPICAL) |
Motorola |
92 |
MPXM2010 |
MPXM2010 10 kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors |
Motorola |
93 |
PAL1016P8JC |
-5.2 V, 10 KH, ECL programmable array logic |
National Semiconductor |
94 |
PBRN113ZT |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 10 kOhm |
Nexperia |
95 |
PBRN113ZT |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
96 |
PBRN123YT |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm |
Nexperia |
97 |
PBRN123YT |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
98 |
PBRP113ZT |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 10 kOhm |
Nexperia |
99 |
PBRP113ZT |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
100 |
PBRP123YT |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm |
Nexperia |
101 |
PBRP123YT |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
102 |
PDTA113ZE |
PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm |
Nexperia |
103 |
PDTA113ZE |
PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
104 |
PDTA113ZM |
PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm |
Nexperia |
105 |
PDTA113ZM |
PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
106 |
PDTA113ZMB |
PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ |
Nexperia |
107 |
PDTA113ZMB |
PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ |
NXP Semiconductors |
108 |
PDTA113ZT |
PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm |
Nexperia |
109 |
PDTA113ZT |
PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
110 |
PDTA113ZU |
PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm |
Nexperia |
111 |
PDTA113ZU |
PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
112 |
PDTA114EE |
PNP resistor-equipped transistors; R1 = 10 kΩ; R2 = 10 kΩ |
Nexperia |
113 |
PDTA114EE |
PNP resistor-equipped transistors; R1 = 10 kΩ; R2 = 10 kΩ |
Nexperia |
114 |
PDTA114EE |
PNP resistor-equipped transistors; R1 = 10 kΩ; R2 = 10 kΩ |
NXP Semiconductors |
115 |
PDTA114EE |
PNP resistor-equipped transistors; R1 = 10 kΩ; R2 = 10 kΩ |
NXP Semiconductors |
116 |
PDTA114EM |
PNP resistor-equipped transistors; R1 = 10 kΩ; R2 = 10 kΩ |
Nexperia |
117 |
PDTA114EM |
PNP resistor-equipped transistors; R1 = 10 kΩ; R2 = 10 kΩ |
Nexperia |
118 |
PDTA114EM |
PNP resistor-equipped transistors; R1 = 10 kΩ; R2 = 10 kΩ |
NXP Semiconductors |
119 |
PDTA114EM |
PNP resistor-equipped transistors; R1 = 10 kΩ; R2 = 10 kΩ |
NXP Semiconductors |
120 |
PDTA114EM |
PDTA114E series; PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm |
Philips |
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