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Datasheets for 16

Datasheets found :: 12682
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No. Part Name Description Manufacturer
91 2V275 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 430 V @ 1mA DC test current. NTE Electronics
92 2V300 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 470 V @ 1mA DC test current. NTE Electronics
93 2V420 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 680 V @ 1mA DC test current. NTE Electronics
94 2V480 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 750 V @ 1mA DC test current. NTE Electronics
95 3B01 3B Series 16 Channel Backplane Analog Devices
96 41C16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Integrated Silicon Solution Inc
97 42S16400A 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
98 4X16E43V 4 MEG x 16 EDO DRAM etc
99 4X16E83V 4 MEG x 16 EDO DRAM etc
100 4X16E83VTW-6 4 MEG x 16 EDO DRAM etc
101 50S116T 512K x 2 Banks x 16 BITS SDRAM Ceramate
102 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
103 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
104 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
105 54F410 Register Stack 16 x 4 RAM TRI-STATE Output Register National Semiconductor
106 54F410DMQB Register Stack 16 x 4 RAM TRI-STATE Output Register [Life-time buy] National Semiconductor
107 54F410DMQB Register Stack 16 x 4 RAM TRI-STATE Output Register [Life-time buy] National Semiconductor
108 54S416T 1M x 4 Banks x 16 BITS SDRAM Ceramate
109 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
110 54S416T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
111 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
112 5598 MEMA (Micro Electronic Modular Assembley) 16 bit ripple counter Amelco Semiconductor
113 5598BM MEMA (Micro Electronic Modular Assembley) 16 bit ripple counter Amelco Semiconductor
114 5598CM MEMA (Micro Electronic Modular Assembley) 16 bit ripple counter Amelco Semiconductor
115 5605 MEMA (Micro Electronic Modular Assembley) 16 bit ripple counter Amelco Semiconductor
116 5605BM MEMA (Micro Electronic Modular Assembley) 16 bit ripple counter Amelco Semiconductor
117 5605CM MEMA (Micro Electronic Modular Assembley) 16 bit ripple counter Amelco Semiconductor
118 5625 MEMA (Micro Electronic Modular Assembley) 16 bit ripple counter Amelco Semiconductor
119 5625BM MEMA (Micro Electronic Modular Assembley) 16 bit ripple counter Amelco Semiconductor
120 5625CM MEMA (Micro Electronic Modular Assembley) 16 bit ripple counter Amelco Semiconductor


Datasheets found :: 12682
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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