No. |
Part Name |
Description |
Manufacturer |
91 |
2V275 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 430 V @ 1mA DC test current. |
NTE Electronics |
92 |
2V300 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 470 V @ 1mA DC test current. |
NTE Electronics |
93 |
2V420 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 680 V @ 1mA DC test current. |
NTE Electronics |
94 |
2V480 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 750 V @ 1mA DC test current. |
NTE Electronics |
95 |
3B01 |
3B Series 16 Channel Backplane |
Analog Devices |
96 |
41C16257 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
Integrated Silicon Solution Inc |
97 |
42S16400A |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
98 |
4X16E43V |
4 MEG x 16 EDO DRAM |
etc |
99 |
4X16E83V |
4 MEG x 16 EDO DRAM |
etc |
100 |
4X16E83VTW-6 |
4 MEG x 16 EDO DRAM |
etc |
101 |
50S116T |
512K x 2 Banks x 16 BITS SDRAM |
Ceramate |
102 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
103 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
104 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
105 |
54F410 |
Register Stack 16 x 4 RAM TRI-STATE Output Register |
National Semiconductor |
106 |
54F410DMQB |
Register Stack 16 x 4 RAM TRI-STATE Output Register [Life-time buy] |
National Semiconductor |
107 |
54F410DMQB |
Register Stack 16 x 4 RAM TRI-STATE Output Register [Life-time buy] |
National Semiconductor |
108 |
54S416T |
1M x 4 Banks x 16 BITS SDRAM |
Ceramate |
109 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
110 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
111 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
112 |
5598 |
MEMA (Micro Electronic Modular Assembley) 16 bit ripple counter |
Amelco Semiconductor |
113 |
5598BM |
MEMA (Micro Electronic Modular Assembley) 16 bit ripple counter |
Amelco Semiconductor |
114 |
5598CM |
MEMA (Micro Electronic Modular Assembley) 16 bit ripple counter |
Amelco Semiconductor |
115 |
5605 |
MEMA (Micro Electronic Modular Assembley) 16 bit ripple counter |
Amelco Semiconductor |
116 |
5605BM |
MEMA (Micro Electronic Modular Assembley) 16 bit ripple counter |
Amelco Semiconductor |
117 |
5605CM |
MEMA (Micro Electronic Modular Assembley) 16 bit ripple counter |
Amelco Semiconductor |
118 |
5625 |
MEMA (Micro Electronic Modular Assembley) 16 bit ripple counter |
Amelco Semiconductor |
119 |
5625BM |
MEMA (Micro Electronic Modular Assembley) 16 bit ripple counter |
Amelco Semiconductor |
120 |
5625CM |
MEMA (Micro Electronic Modular Assembley) 16 bit ripple counter |
Amelco Semiconductor |
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