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Datasheets for 16

Datasheets found :: 12725
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No. Part Name Description Manufacturer
91 2V035 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 56 V @ 1mA DC test current. NTE Electronics
92 2V040 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 68 V @ 1mA DC test current. NTE Electronics
93 2V050 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 82 V @ 1mA DC test current. NTE Electronics
94 2V060 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 100 V @ 1mA DC test current. NTE Electronics
95 2V075 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 120 V @ 1mA DC test current. NTE Electronics
96 2V095 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 150 V @ 1mA DC test current. NTE Electronics
97 2V115 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 171 V @ 1mA DC test current. NTE Electronics
98 2V130 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 216 V @ 1mA DC test current. NTE Electronics
99 2V150 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 240 V @ 1mA DC test current. NTE Electronics
100 2V250 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 390 V @ 1mA DC test current. NTE Electronics
101 2V275 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 430 V @ 1mA DC test current. NTE Electronics
102 2V300 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 470 V @ 1mA DC test current. NTE Electronics
103 2V420 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 680 V @ 1mA DC test current. NTE Electronics
104 2V480 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 750 V @ 1mA DC test current. NTE Electronics
105 3B01 3B Series 16 Channel Backplane Analog Devices
106 3D16A-P DIP 16 PIN OUTLINE DRAWING PACKAGE TOSHIBA
107 41C16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Integrated Silicon Solution Inc
108 42S16400A 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
109 4X16E43V 4 MEG x 16 EDO DRAM etc
110 4X16E83V 4 MEG x 16 EDO DRAM etc
111 4X16E83VTW-6 4 MEG x 16 EDO DRAM etc
112 50S116T 512K x 2 Banks x 16 BITS SDRAM Ceramate
113 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
114 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
115 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
116 54F410 Register Stack 16 x 4 RAM TRI-STATE Output Register National Semiconductor
117 54F410DMQB Register Stack 16 x 4 RAM TRI-STATE Output Register [Life-time buy] National Semiconductor
118 54F410DMQB Register Stack 16 x 4 RAM TRI-STATE Output Register [Life-time buy] National Semiconductor
119 54S416T 1M x 4 Banks x 16 BITS SDRAM Ceramate
120 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate


Datasheets found :: 12725
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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