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Datasheets for 166

Datasheets found :: 126
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
91 GVT71512D18T-6 512K x 18 pipelined SRAM, 166MHz Cypress
92 GVT71512D18TA-6 512K x 18 pipelined SRAM, 166MHz Cypress
93 HY57V161610ETP-6I 2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 166MHz Hynix Semiconductor
94 HY57V281620ALT-6 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz Hynix Semiconductor
95 HY57V281620AT-6 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz Hynix Semiconductor
96 HY57V281620HCLT-6 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz Hynix Semiconductor
97 HY57V281620HCLT-6I 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz Hynix Semiconductor
98 HY57V281620HCLTP-6 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz Hynix Semiconductor
99 HY57V281620HCST-6 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz Hynix Semiconductor
100 HY57V281620HCST-6I 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz Hynix Semiconductor
101 HY57V281620HCSTP-6 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz Hynix Semiconductor
102 HY57V281620HCT-6 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz Hynix Semiconductor
103 HY57V281620HCT-6I 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz Hynix Semiconductor
104 HY57V281620HCTP-6 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz Hynix Semiconductor
105 HY57V641620HGLT-6 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 166 MHz Hynix Semiconductor
106 HY57V641620HGLT-6I 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 166 MHz Hynix Semiconductor
107 IMISM561BZ 54- to 166-MHz operating frequency range Cypress
108 K4S281632D-TC60 128Mb SDRAM, 3.3V, LVTTL, 166MHz Samsung Electronic
109 K4S281632D-TL60 128Mb SDRAM, 3.3V, LVTTL, 166MHz Samsung Electronic
110 K4S281632E-TCL60 128Mb SDRAM, 3.3V, LVTTL, 166MHz Samsung Electronic
111 K4S561632E-NC60 16M x 16 SDRAM, LVTTL, 166MHz Samsung Electronic
112 K4S561632E-NCL60 16M x 16 SDRAM, LVTTL, 166MHz Samsung Electronic
113 K4S561632E-TCL60 16M x 16 SDRAM, LVTTL, 166MHz Samsung Electronic
114 K4S641632C-TC60 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz Samsung Electronic
115 K4S641632C-TL60 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz Samsung Electronic
116 K4S643232H-TC60 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz Samsung Electronic
117 K4S643232H-TL60 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz Samsung Electronic
118 NJU6396 3rd. Over Tone Quartz Crystal Oscillator for 166MHz New Japan Radio
119 P2160A-08SR 3.3 V, 40 MHz to 166 MHz, high frequency LCD panel EMI reduction IC Alliance Semiconductor
120 P2160A-08ST 3.3 V, 40 MHz to 166 MHz, high frequency LCD panel EMI reduction IC Alliance Semiconductor


Datasheets found :: 126
Page: | 1 | 2 | 3 | 4 | 5 |



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