No. |
Part Name |
Description |
Manufacturer |
91 |
GVT71512D18T-6 |
512K x 18 pipelined SRAM, 166MHz |
Cypress |
92 |
GVT71512D18TA-6 |
512K x 18 pipelined SRAM, 166MHz |
Cypress |
93 |
HY57V161610ETP-6I |
2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
94 |
HY57V281620ALT-6 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
95 |
HY57V281620AT-6 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
96 |
HY57V281620HCLT-6 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
97 |
HY57V281620HCLT-6I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
98 |
HY57V281620HCLTP-6 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
99 |
HY57V281620HCST-6 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
100 |
HY57V281620HCST-6I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
101 |
HY57V281620HCSTP-6 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
102 |
HY57V281620HCT-6 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
103 |
HY57V281620HCT-6I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
104 |
HY57V281620HCTP-6 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
105 |
HY57V641620HGLT-6 |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 166 MHz |
Hynix Semiconductor |
106 |
HY57V641620HGLT-6I |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 166 MHz |
Hynix Semiconductor |
107 |
IMISM561BZ |
54- to 166-MHz operating frequency range |
Cypress |
108 |
K4S281632D-TC60 |
128Mb SDRAM, 3.3V, LVTTL, 166MHz |
Samsung Electronic |
109 |
K4S281632D-TL60 |
128Mb SDRAM, 3.3V, LVTTL, 166MHz |
Samsung Electronic |
110 |
K4S281632E-TCL60 |
128Mb SDRAM, 3.3V, LVTTL, 166MHz |
Samsung Electronic |
111 |
K4S561632E-NC60 |
16M x 16 SDRAM, LVTTL, 166MHz |
Samsung Electronic |
112 |
K4S561632E-NCL60 |
16M x 16 SDRAM, LVTTL, 166MHz |
Samsung Electronic |
113 |
K4S561632E-TCL60 |
16M x 16 SDRAM, LVTTL, 166MHz |
Samsung Electronic |
114 |
K4S641632C-TC60 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz |
Samsung Electronic |
115 |
K4S641632C-TL60 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz |
Samsung Electronic |
116 |
K4S643232H-TC60 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz |
Samsung Electronic |
117 |
K4S643232H-TL60 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz |
Samsung Electronic |
118 |
NJU6396 |
3rd. Over Tone Quartz Crystal Oscillator for 166MHz |
New Japan Radio |
119 |
P2160A-08SR |
3.3 V, 40 MHz to 166 MHz, high frequency LCD panel EMI reduction IC |
Alliance Semiconductor |
120 |
P2160A-08ST |
3.3 V, 40 MHz to 166 MHz, high frequency LCD panel EMI reduction IC |
Alliance Semiconductor |
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