DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 1M

Datasheets found :: 6619
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 2V250 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 390 V @ 1mA DC test current. NTE Electronics
92 2V275 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 430 V @ 1mA DC test current. NTE Electronics
93 2V300 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 470 V @ 1mA DC test current. NTE Electronics
94 2V420 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 680 V @ 1mA DC test current. NTE Electronics
95 2V480 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 750 V @ 1mA DC test current. NTE Electronics
96 35PD1M-TO The 35PD1M-TO, an InGaAs photodiode with a 1mm-diameter photosensitive packaged in a TO-46 header, is designed for applications in ... Anadigics Inc
97 458 High Accuracy, 100kHz and 1MHz Voltage to Frequency Converters Intronics
98 458J High Accuracy, 100kHz and 1MHz Voltage to Frequency Converters Intronics
99 460 High Accuracy, 100kHz and 1MHz Voltage to Frequency Converters Intronics
100 460K High Accuracy, 100kHz and 1MHz Voltage to Frequency Converters Intronics
101 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
102 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
103 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
104 524V13 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 216 V @ 1mA DC test current. NTE Electronics
105 524V15 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 240 V @ 1mA DC test current. NTE Electronics
106 524V17 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 270 V @ 1mA DC test current. NTE Electronics
107 524V25 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 390 V @ 1mA DC test current. NTE Electronics
108 524V27 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 430 V @ 1mA DC test current. NTE Electronics
109 524V30 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 470 V @ 1mA DC test current. NTE Electronics
110 524V42 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 680 V @ 1mA DC test current. NTE Electronics
111 524V48 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 750 V @ 1mA DC test current. NTE Electronics
112 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
113 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
114 54S416T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
115 54S416T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
116 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
117 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
118 82C52 Serial Controller Interface, UART, Baud Rate Generator, CMOS, 1M Baud Intersil
119 8785 ��15KV ESD-PROTECTED, 1mA, 3 TO 5.5V, 250KBPS, RS-232 TRANSCEIVER WITH STAND-BY ST Microelectronics
120 8Q1024K8 high-performance 1M byte (8Mbit) CMOS static RAM Aeroflex Circuit Technology


Datasheets found :: 6619
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



© 2024 - www Datasheet Catalog com