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Datasheets for 200V,

Datasheets found :: 123
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
91 IRFP9240 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET Fairchild Semiconductor
92 IRFR220 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs Fairchild Semiconductor
93 IRFR220 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs Intersil
94 IRFR9220 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs Fairchild Semiconductor
95 IRFR9220 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs Intersil
96 IRFU220 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs Fairchild Semiconductor
97 IRFU220 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs Intersil
98 IRFU9220 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs Intersil
99 MB252 Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V, max RMS bridge input voltage 140V, max DC blocking voltage 200V. Max average forward rectified output current 25A at Tc=55degC. Rectron Semiconductor
100 MUR120 Ultrafast Plastic Rectifier, Forward Current 1.0A, Reverse Voltage 200V, Reverse Recovery Time 25ns Vishay
101 NTE588 Silicon Diode 200V, 3A, Ultra Fast Switch NTE Electronics
102 NTE597 Silicon Rectifier Ultra Fast, 200V, 8A NTE Electronics
103 NTE599 Silicon Rectifier Ultra Fast, 200V, 15A NTE Electronics
104 RF1S640 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs Fairchild Semiconductor
105 RF1S640SM 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs Fairchild Semiconductor
106 RF1S640SM 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs Intersil
107 RF1S640SM9A 18A, 200V, 0.180Ohm, N-Channel Power MOSFETs Fairchild Semiconductor
108 RF1S9630SM 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs Fairchild Semiconductor
109 RF1S9640SM 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs Fairchild Semiconductor
110 RFP2N20L 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET Fairchild Semiconductor
111 RURD620CCS_F085 6A, 200V, Ultrafast Dual Diode Fairchild Semiconductor
112 SGSP217 N-channel power MOS transistor, 200V, 6A SGS Thomson Microelectronics
113 SGSP317 N-channel power MOS transistor, 200V, 6A SGS Thomson Microelectronics
114 SGSP517 N-channel power MOS transistor, 200V, 6A SGS Thomson Microelectronics
115 SPD07N20 Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.4 Ohm, 7.0A, NL Infineon
116 T10A200B T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 180V,max. Ir = 50uA @ Vr = 200V,max, Bulk (500pcs). Littelfuse
117 T10A200T T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 180V,max. Ir = 50uA @ Vr = 200V,max, Tape and reeled (1500pcs). Littelfuse
118 T10B200B T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 170V,max. Ir = 50uA @ Vr = 200V,max, Bulk (500pcs). Littelfuse
119 T10B200T T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 170V,max. Ir = 50uA @ Vr = 200V,max, Tape and reeled (1500pcs). Littelfuse
120 T10B230B T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 200V,max. Ir = 50uA @ Vr = 230V,max, Bulk (500pcs). Littelfuse


Datasheets found :: 123
Page: | 1 | 2 | 3 | 4 | 5 |



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