No. |
Part Name |
Description |
Manufacturer |
91 |
IRFP9240 |
12A, 200V, 0.500 Ohm, P-Channel Power MOSFET |
Fairchild Semiconductor |
92 |
IRFR220 |
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
93 |
IRFR220 |
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs |
Intersil |
94 |
IRFR9220 |
3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
Fairchild Semiconductor |
95 |
IRFR9220 |
3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
Intersil |
96 |
IRFU220 |
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
97 |
IRFU220 |
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs |
Intersil |
98 |
IRFU9220 |
3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
Intersil |
99 |
MB252 |
Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V, max RMS bridge input voltage 140V, max DC blocking voltage 200V. Max average forward rectified output current 25A at Tc=55degC. |
Rectron Semiconductor |
100 |
MUR120 |
Ultrafast Plastic Rectifier, Forward Current 1.0A, Reverse Voltage 200V, Reverse Recovery Time 25ns |
Vishay |
101 |
NTE588 |
Silicon Diode 200V, 3A, Ultra Fast Switch |
NTE Electronics |
102 |
NTE597 |
Silicon Rectifier Ultra Fast, 200V, 8A |
NTE Electronics |
103 |
NTE599 |
Silicon Rectifier Ultra Fast, 200V, 15A |
NTE Electronics |
104 |
RF1S640 |
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
105 |
RF1S640SM |
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
106 |
RF1S640SM |
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs |
Intersil |
107 |
RF1S640SM9A |
18A, 200V, 0.180Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
108 |
RF1S9630SM |
6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs |
Fairchild Semiconductor |
109 |
RF1S9640SM |
11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs |
Fairchild Semiconductor |
110 |
RFP2N20L |
2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET |
Fairchild Semiconductor |
111 |
RURD620CCS_F085 |
6A, 200V, Ultrafast Dual Diode |
Fairchild Semiconductor |
112 |
SGSP217 |
N-channel power MOS transistor, 200V, 6A |
SGS Thomson Microelectronics |
113 |
SGSP317 |
N-channel power MOS transistor, 200V, 6A |
SGS Thomson Microelectronics |
114 |
SGSP517 |
N-channel power MOS transistor, 200V, 6A |
SGS Thomson Microelectronics |
115 |
SPD07N20 |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.4 Ohm, 7.0A, NL |
Infineon |
116 |
T10A200B |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 180V,max. Ir = 50uA @ Vr = 200V,max, Bulk (500pcs). |
Littelfuse |
117 |
T10A200T |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 180V,max. Ir = 50uA @ Vr = 200V,max, Tape and reeled (1500pcs). |
Littelfuse |
118 |
T10B200B |
T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 170V,max. Ir = 50uA @ Vr = 200V,max, Bulk (500pcs). |
Littelfuse |
119 |
T10B200T |
T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 170V,max. Ir = 50uA @ Vr = 200V,max, Tape and reeled (1500pcs). |
Littelfuse |
120 |
T10B230B |
T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 200V,max. Ir = 50uA @ Vr = 230V,max, Bulk (500pcs). |
Littelfuse |
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