No. |
Part Name |
Description |
Manufacturer |
91 |
2N6170 |
Thyristor PNPN - Silicon Controlled Rectifier 20A RMS 600V |
Motorola |
92 |
2N6282 |
Darlington 20A complementary silicon 160W power NPN transistor |
Motorola |
93 |
2N6282 |
Trans Darlington NPN 60V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
94 |
2N6283 |
Darlington 20A complementary silicon 160W power NPN transistor |
Motorola |
95 |
2N6283 |
Trans Darlington NPN 80V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
96 |
2N6284 |
Darlington 20A complementary silicon 160W power NPN transistor |
Motorola |
97 |
2N6284 |
Trans Darlington NPN 100V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
98 |
2N6284 |
Power 20A 100V Darlington NPN |
ON Semiconductor |
99 |
2N6285 |
Darlington 20A complementary silicon 160W power PNP transistor |
Motorola |
100 |
2N6285 |
Trans Darlington PNP 60V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
101 |
2N6286 |
Darlington 20A complementary silicon 160W power PNP transistor |
Motorola |
102 |
2N6286 |
Trans Darlington PNP 80V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
103 |
2N6286 |
Power 20A 80V Darlington PNP |
ON Semiconductor |
104 |
2N6287 |
Darlington 20A complementary silicon 160W power PNP transistor |
Motorola |
105 |
2N6287 |
Trans Darlington PNP 100V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
106 |
2N6287 |
Power 20A 100V Darlington PNP |
ON Semiconductor |
107 |
2N6287G |
Trans Darlington PNP 100V 20A 3-Pin(2+Tab) TO-204 Tray |
New Jersey Semiconductor |
108 |
2N6564 |
Thyristor SCR 400V 20A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
109 |
2N6565 |
Thyristor SCR 400V 20A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
110 |
2N6653 |
Trans GP BJT NPN 300V 20A |
New Jersey Semiconductor |
111 |
2N6654 |
Trans GP BJT NPN 350V 20A |
New Jersey Semiconductor |
112 |
2N6688 |
Trans GP BJT NPN 200V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
113 |
2N6837 |
Trans GP BJT NPN 450V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
114 |
2SA1302 |
Trans GP BJT PNP 200V 20A 3-Pin(3+Tab) TO-247 |
New Jersey Semiconductor |
115 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
116 |
2SK3707 |
N-Channel Power MOSFET, 100V, 20A, 60mOhm, TO-220F-3SG |
ON Semiconductor |
117 |
2SK4124 |
N-Channel Power MOSFET, 500V, 20A, 430mOhm, TO-3P-3L |
ON Semiconductor |
118 |
30CTH02 |
200V 20A HyperFast Discrete Diode in a TO-220AB package |
International Rectifier |
119 |
30CTH02-1 |
300V 20A HyperFast Discrete Diode in a TO-262 package |
International Rectifier |
120 |
30CTH02FP |
300V 20A HyperFast Discrete Diode in a TO-220 FullPak package |
International Rectifier |
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