| No. |
Part Name |
Description |
Manufacturer |
| 91 |
CSD313C |
30.000W Low Frequency NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 - 80 hFE. |
Continental Device India Limited |
| 92 |
CSD313D |
30.000W Low Frequency NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 93 |
CSD313E |
30.000W Low Frequency NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. |
Continental Device India Limited |
| 94 |
CSD313F |
30.000W Low Frequency NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. |
Continental Device India Limited |
| 95 |
CSD880 |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 300 hFE. Complementary CSB834 |
Continental Device India Limited |
| 96 |
CSD880GR |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 150 - 300 hFE. Complementary CSB834GR |
Continental Device India Limited |
| 97 |
CSD880O |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB834O |
Continental Device India Limited |
| 98 |
CSD880Y |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB834Y |
Continental Device India Limited |
| 99 |
MAS1174 |
IC for 10.00 - 30.00 MHz VCXO |
mas MICRO ANALOG SYSTEMS |
| 100 |
MAS1174AC1 |
IC for 10.00 - 30.00 MHz VCXO |
mas MICRO ANALOG SYSTEMS |
| 101 |
MAS9271ATB1 |
IC for 10.00 - 30.00 MHz PXO |
mas MICRO ANALOG SYSTEMS |
| 102 |
MAS9271ATG1 |
IC for 10.00 - 30.00 MHz PXO |
mas MICRO ANALOG SYSTEMS |
| 103 |
MAS9275 |
IC for 10.00 - 30.00 MHz VCXO |
mas MICRO ANALOG SYSTEMS |
| 104 |
MAS9275ATC1 |
IC for 10.00 - 30.00 MHz VCXO |
mas MICRO ANALOG SYSTEMS |
| 105 |
MAS9275ATG1 |
IC for 10.00 - 30.00 MHz VCXO |
mas MICRO ANALOG SYSTEMS |
| 106 |
MHL9236 |
MHL9236, MHL9236M 800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifiers |
Motorola |
| 107 |
MHW1303LA |
5–200 MHz, 30.8 dB 10–Channel CATV Low Current Amplifier Module |
Freescale (Motorola) |
| 108 |
MHW1303LA |
MHW1303LA 5-200 MHz, 30.8 dB, 10-Channel CATV Low Current Amplifier Module |
Motorola |
| 109 |
MHW1304LA |
5–65 MHz, 30.8 dB 10–Channel CATV Low Current Amplifier Module |
Freescale (Motorola) |
| 110 |
MHW1304LA |
MHW1304LA 5-65 MHz, 30.8 dB, 10-Channel CATV Low Current Amplifier Module |
Motorola |
| 111 |
MMBZ5256B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 30.0 V. Test current 4.2 mA. |
Chenyi Electronics |
| 112 |
MMBZ5256B |
Surface mount zener diode. Nominal zener voltage 30.0V, test current 4.2mA. |
Jinan Gude Electronic Device |
| 113 |
MODEL 23 |
Multidail 10mm Turns 30.6mm Dia, Projecting Design |
Vishay |
| 114 |
MODEL 23 |
Multidial 10 Turns 30.6mm Dia Projecting Design |
Vishay |
| 115 |
MODEL 26 |
Multidial 10 Turns 30.6mm Dia, Recessed Design |
Vishay |
| 116 |
NTE4846 |
Surge clamping, transient overvoltage suppressor unidirectional. VR = 30.0V max reverse stand off voltage. |
NTE Electronics |
| 117 |
NTE5268AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 30.0V. Zener test current Izt = 420mA. |
NTE Electronics |
| 118 |
P6KE36A |
Diode TVS Single Uni-Dir 30.8V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 119 |
P6KE36CA |
Diode TVS Single Bi-Dir 30.8V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
| 120 |
P6KE36CP |
Diode TVS Single Bi-Dir 30.8V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
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