No. |
Part Name |
Description |
Manufacturer |
91 |
1N5232B |
500 milliwatts glass silicon zener diode, zener voltage 5.6V |
Motorola |
92 |
1N5232B |
Diode Zener Single 5.6V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
93 |
1N5232BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.6 V. Tolerance +-5%. |
Microsemi |
94 |
1N5232C |
Diode Zener Single 5.6V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
95 |
1N5232D |
Diode Zener Single 5.6V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
96 |
1N5232UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.6 V. |
Microsemi |
97 |
1N5251A |
22 V, 5.6 mA, zener diode |
Leshan Radio Company |
98 |
1N5251C |
22 V, 5.6 mA, zener diode |
Leshan Radio Company |
99 |
1N5251D |
22 V, 5.6 mA, zener diode |
Leshan Radio Company |
100 |
1N5339 |
Zener Diode 5.6V 5W |
Motorola |
101 |
1N5339 |
Diode Zener Single 5.6V 20% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
102 |
1N5339A |
Zener Diode 5.6V 5W |
Motorola |
103 |
1N5339A |
Diode Zener Single 5.6V 10% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
104 |
1N5339B |
Zener Diode 5.6V 5W |
Motorola |
105 |
1N5339B |
Diode Zener Single 5.6V 5% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
106 |
1N5339B |
Zener 5.6V 5W 5% |
ON Semiconductor |
107 |
1N5339BRL |
Zener 5.6V 5W 5% |
ON Semiconductor |
108 |
1N5339C |
Diode Zener Single 5.6V 2% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
109 |
1N5339D |
Diode Zener Single 5.6V 1% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
110 |
1N5524 |
Diode Zener Single 5.6V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
111 |
1N5524A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
112 |
1N5524A |
Diode Zener Single 5.6V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
113 |
1N5524B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
114 |
1N5524B |
Diode Zener Single 5.6V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
115 |
1N5524C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
116 |
1N5524C |
Diode Zener Single 5.6V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
117 |
1N5524D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
118 |
1N5524D |
Diode Zener Single 5.6V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
119 |
1N5730 |
Diode Zener Single 5.6V 20% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
120 |
1N5730B |
Diode Zener Single 5.6V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| | | |