No. |
Part Name |
Description |
Manufacturer |
91 |
PDTD123YU |
500 mA, 50 V NPN resistor-equipped transistors |
NXP Semiconductors |
92 |
PDTD143ET |
500 mA, 50 V NPN resistor-equipped transistors |
Nexperia |
93 |
PDTD143ET |
500 mA, 50 V NPN resistor-equipped transistors |
NXP Semiconductors |
94 |
PDTD143EU |
500 mA, 50 V NPN resistor-equipped transistors |
Nexperia |
95 |
PDTD143EU |
500 mA, 50 V NPN resistor-equipped transistors |
NXP Semiconductors |
96 |
PDTD143XT |
500 mA, 50 V NPN resistor-equipped transistors |
Nexperia |
97 |
PDTD143XT |
500 mA, 50 V NPN resistor-equipped transistors |
NXP Semiconductors |
98 |
PDTD143XU |
500 mA, 50 V NPN resistor-equipped transistors |
Nexperia |
99 |
PDTD143XU |
500 mA, 50 V NPN resistor-equipped transistors |
NXP Semiconductors |
100 |
PIMC31 |
500 mA, 50 V NPN/PNP double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm |
Nexperia |
101 |
PIMC31 |
500 mA, 50 V NPN/PNP double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
102 |
PIMN31 |
500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm |
Nexperia |
103 |
PIMN31 |
500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
104 |
QPD1004 |
30 - 1200 MHz, 25 Watt, 50 V GaN RF Input-Matched Transistor |
Qorvo |
105 |
QPD1009 |
DC - 4 GHz, 15 Watt, 50 V GaN RF Transistor |
Qorvo |
106 |
QPD1010 |
DC - 4 GHz, 10 Watt, 50 V GaN RF Transistor |
Qorvo |
107 |
QPD1015 |
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor |
Qorvo |
108 |
QPD1015L |
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor |
Qorvo |
109 |
QPD1017 |
3.1 - 3.5 GHz, 450 Watt, 50 V GaN RF IMFET |
Qorvo |
110 |
T1G4012036-FS |
DC - 3.5 GHz, 120 Watt, 36 - 50 V GaN RF Power Transistor |
Qorvo |
111 |
T1G4020036-FL |
DC - 3.5 GHz, 2x200 Watt, 50 V GaN RF Power Transistor |
Qorvo |
112 |
T1G4020036-FS |
DC - 3.5 GHz, 2x200 Watt, 50 V GaN RF Power Transistor |
Qorvo |
113 |
TGF2819-FL |
DC - 4 GHz, 200 Watt, 50 V GaN RF Power Transistor |
Qorvo |
114 |
TGF2819-FS |
DC - 4 GHz, 200 Watt, 50 V GaN RF Power Transistor |
Qorvo |
115 |
TPR175 |
175 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
116 |
TPR175-2 |
175 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
117 |
TPR175-3 |
175 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
118 |
TPR400 |
400 W, 50 V silicon NPN common base RF power transistor |
Acrian |
119 |
TPR400-2 |
400 W, 50 V silicon NPN common base RF power transistor |
Acrian |
120 |
TPR400-3 |
400 W, 50 V silicon NPN common base RF power transistor |
Acrian |
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