No. |
Part Name |
Description |
Manufacturer |
91 |
HY51V65163HGLJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
92 |
HY51V65163HGLT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
93 |
HY51VS17403HGJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
94 |
HY51VS17403HGLJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
95 |
HY51VS17403HGLT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
96 |
HY51VS17403HGT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
97 |
HY51VS18163HGJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
98 |
HY51VS18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
99 |
HY51VS18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
100 |
HY51VS18163HGT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
101 |
HY51VS65163HGJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
Hynix Semiconductor |
102 |
HY51VS65163HGLJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
103 |
HY51VS65163HGLT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
104 |
HY51VS65163HGT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
Hynix Semiconductor |
105 |
HY534256AJ-50 |
256K x 4-bit CMOS DRAM, 50ns |
Hynix Semiconductor |
106 |
HY534256ALJ-50 |
256K x 4-bit CMOS DRAM, 50ns, low power |
Hynix Semiconductor |
107 |
HYB5116400BT-50 |
4M x 4 Bit FPM DRAM 5 V 4k 50ns |
Infineon |
108 |
IS41C16256-50K |
256K x 16 (4-Mbit) DRAM with EDO page mode, 50ns |
ICSI |
109 |
IS41C16256-50KI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 50ns |
ICSI |
110 |
IS41C16256-50T |
256K x 16 (4-Mbit) DRAM with EDO page mode, 50ns |
ICSI |
111 |
IS41C16256-50TI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 50ns |
ICSI |
112 |
IS41LV16256-50K |
256K x 16 (4-Mbit) DRAM with EDO page mode, 50ns |
ICSI |
113 |
IS41LV16256-50K |
256K x 16 (4-Mbit) DRAM with edo page mode, 50ns |
Integrated Silicon Solution Inc |
114 |
IS41LV16256-50KI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 50ns |
ICSI |
115 |
IS41LV16256-50T |
256K x 16 (4-Mbit) DRAM with EDO page mode, 50ns |
ICSI |
116 |
IS41LV16256-50T |
256K x 16 (4-Mbit) DRAM with edo page mode, 50ns |
Integrated Silicon Solution Inc |
117 |
IS41LV16256-50TI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 50ns |
ICSI |
118 |
K4E640812B-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
119 |
K4E640812B-JCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
120 |
K4E640812B-TC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| | | |