Datasheets for 550

Datasheets found :: 119 Page: | 1 | 2 | 3 | 4 |

No.	Part Name	Description	Manufacturer
91	NX8562LB	1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE	NEC
92	NX8562LB-BA	1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE	NEC
93	NX8562LB-CA	1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE	NEC
94	NX8563LB	1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE	NEC
95	PE3291-00	1.2 GHz / 550 MHz dual fractional-N flexiPower PLL for frequency synthesis	Peregrine Semiconductor
96	PE3291-04	1.2 GHz / 550 MHz dual fractional-N flexiPower PLL for frequency synthesis	Peregrine Semiconductor
97	PE3291-11	1.2 GHz / 550 MHz dual fractional-N flexiPower PLL for frequency synthesis	Peregrine Semiconductor
98	PE3291-12	1.2 GHz / 550 MHz dual fractional-N flexiPower PLL for frequency synthesis	Peregrine Semiconductor
99	PE3291-14	1.2 GHz / 550 MHz dual fractional-N flexiPower PLL for frequency synthesis	Peregrine Semiconductor
100	PE3291-15	1.2 GHz / 550 MHz dual fractional-N flexiPower PLL for frequency synthesis	Peregrine Semiconductor
101	PE3293-00	1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis	Peregrine Semiconductor
102	PE3293-04	1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis	Peregrine Semiconductor
103	PE3293-11	1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis	Peregrine Semiconductor
104	PE3293-12	1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis	Peregrine Semiconductor
105	PE3293-14	1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis	Peregrine Semiconductor
106	PE3293-15	1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis	Peregrine Semiconductor
107	PH1090-550S	Avionics Pulsed Power Transistor - 550 Watts,1030-1090 MHz, 10us Pulse, 1% Duty	Tyco Electronics
108	PMDT290UCE	20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET	Nexperia
109	PMDT290UCE	20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET	NXP Semiconductors
110	PMDT670UPE	20 V, 550 mA dual P-channel Trench MOSFET	Nexperia
111	PMDT670UPE	20 V, 550 mA dual P-channel Trench MOSFET	NXP Semiconductors
112	STB18N55M5	N-channel 550 V, 0.150 Ohm typ., 16 A, MDmesh(TM) V Power MOSFET in D2PAK package	ST Microelectronics
113	STD18N55M5	N-channel 550 V, 0.150 Ohm typ., 16 A, MDmesh(TM) V Power MOSFET in DPAK package	ST Microelectronics
114	STF18N55M5	N-channel 550 V, 0.150 Ohm, 16 A, MDmesh(TM) V Power MOSFET in TO-220FP package	ST Microelectronics
115	STL18N55M5	N-channel 550 V, 0.205 Ohm typ., 13 A MDmesh(TM) V Power MOSFET in PowerFLAT(TM) 8x8 HV package	ST Microelectronics
116	STL36N55M5	N-channel 550 V, 0.066 Ohm typ., 22.5 A MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package	ST Microelectronics
117	STP18N55M5	N-channel 550 V, 0.150 Ohm typ., 16 A, MDmesh(TM) V Power MOSFET in TO-220 package	ST Microelectronics
118	STP36N55M5	N-channel 550 V, 0.06 Ohm, 33 A, MDmesh(TM) V Power MOSFET in TO-220 package	ST Microelectronics
119	STW36N55M5	N-channel 550 V, 0.06 Ohm, 33 A, MDmesh(TM) V Power MOSFET in TO-247 package	ST Microelectronics

Datasheets found :: 119 Page: | 1 | 2 | 3 | 4 |