No. |
Part Name |
Description |
Manufacturer |
91 |
GS841Z36AT-180 |
180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
92 |
GS841Z36AT-180I |
180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
93 |
GS842Z18AB-180 |
180MHz 8ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
94 |
GS842Z18AB-180I |
180MHz 8ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
95 |
GS842Z36AB-180 |
180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
96 |
GS842Z36AB-180I |
180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
97 |
GS88418B-180 |
200MHz 8ns 512K x 18 8Mb S/DCD sync burst SRAM |
GSI Technology |
98 |
GS88418B-180I |
180MHz 8ns 512K x 18 8Mb S/DCD sync burst SRAM |
GSI Technology |
99 |
GS88436B-180 |
180MHz 8ns 256K x 36 8Mb S/DCD sync burst SRAM |
GSI Technology |
100 |
GS88436B-180I |
180MHz 8ns 256K x 36 8Mb S/DCD sync burst SRAM |
GSI Technology |
101 |
IDT70T631S008BC |
High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 8ns |
IDT |
102 |
IDT70T631S008BF |
High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 8ns |
IDT |
103 |
IDT70T633S008BC |
High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 8ns |
IDT |
104 |
IDT70T633S008BF |
High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 8ns |
IDT |
105 |
IDT70T651S008BC |
High-speed 2.5V 256 x 36 asynchronous dual-port static RAM, 8ns |
IDT |
106 |
IDT70T651S008BF |
High-speed 2.5V 256 x 36 asynchronous dual-port static RAM, 8ns |
IDT |
107 |
IDT70T659S008BC |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns |
IDT |
108 |
IDT70T659S008BF |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns |
IDT |
109 |
IS61LV12816L-8B |
128K x 16 high-speed CMOS static RAM, 3.3V, 8ns |
Integrated Silicon Solution Inc |
110 |
IS61LV12816L-8BI |
128K x 16 high-speed CMOS static RAM, 3.3V, 8ns |
Integrated Silicon Solution Inc |
111 |
IS61LV12816L-8LQ |
128K x 16 high-speed CMOS static RAM, 3.3V, 8ns |
Integrated Silicon Solution Inc |
112 |
IS61LV12816L-8LQI |
128K x 16 high-speed CMOS static RAM, 3.3V, 8ns |
Integrated Silicon Solution Inc |
113 |
IS61LV12816L-8T |
128K x 16 high-speed CMOS static RAM, 3.3V, 8ns |
Integrated Silicon Solution Inc |
114 |
IS61LV12816L-8TI |
128K x 16 high-speed CMOS static RAM, 3.3V, 8ns |
Integrated Silicon Solution Inc |
115 |
IS61LV6464-8PQ |
66ns; 8ns; 3.3V; 64K x 64 synchoronous pipelined static RAM |
ICSI |
116 |
IS61LV6464-8TQ |
66ns; 8ns; 3.3V; 64K x 64 synchoronous pipelined static RAM |
ICSI |
117 |
IS61SP6464-8PQ |
66MHz; 8ns; 3.3V; 64K x 64 synchronous pipelined static RAM |
ICSI |
118 |
IS61SP6464-8TQ |
66MHz; 8ns; 3.3V; 64K x 64 synchronous pipelined static RAM |
ICSI |
119 |
KM4132G271AQ-8 |
128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, 8ns |
Samsung Electronic |
120 |
KM4132G271AQR-8 |
128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, 8ns |
Samsung Electronic |
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