No. |
Part Name |
Description |
Manufacturer |
91 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
92 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
93 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
94 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
95 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
96 |
2N2976 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
97 |
2N2977 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
98 |
2N2978 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
99 |
2N2979 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
100 |
2N3445 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
101 |
2N3446 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
102 |
2N3447 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
103 |
2N3448 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
104 |
2N524 |
PNP germanium transistor to be used in the audio-frequency range |
Motorola |
105 |
2N525 |
PNP germanium transistor to be used in the audio-frequency range |
Motorola |
106 |
2N526 |
PNP germanium transistor to be used in the audio-frequency range |
Motorola |
107 |
2N527 |
PNP germanium transistor to be used in the audio-frequency range |
Motorola |
108 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
109 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
110 |
37LV128 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV128 is a Serial OTP EPROM device organized internally in a x32 configuration with 131,072 bits and 4096x32 programming word. The 37LV128 is suitable fo |
Microchip |
111 |
37LV36 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 36,288 bits and 1134x32 programming word. The 37LV36 is suitable for m |
Microchip |
112 |
37LV65 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 65,536 bits and 2048x32 programming word. The 37LV36 is suitable for m |
Microchip |
113 |
40940 |
5W, 400MHz Silicon NPN Overlay Transistor for VHF/UHF High-Power Amplifiers, Warning - device contains beryllium oxide |
RCA Solid State |
114 |
4CX1500B |
RADIAL BEAM POWER TETRODE |
Eimac |
115 |
4X150A |
RADIAL BEAM POWER TETRODE |
Eimac |
116 |
4X150D |
RADIAL BEAM POWER TETRODE |
Eimac |
117 |
60030 |
Low Profile Bending Beam |
Vishay |
118 |
60030 |
Low Profile Bending Beam |
Vishay |
119 |
65040 |
Double-Ended Shear Beam Load Cell |
Vishay |
120 |
73K222AL |
V.22, V.21, Bell 212A, 103 Single-Chip Modem |
TDK Semiconductor |
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