| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N4238 |
6.000W General Purpose NPN Metal Can Transistor. 60V Vceo, 1.000A Ic, 30 hFE. |
Continental Device India Limited |
| 92 |
2N4239 |
1.000W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 15 hFE. |
Continental Device India Limited |
| 93 |
2N4391 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 94 |
2N4392 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 95 |
2N4393 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 96 |
2N4416 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 97 |
2N4416A |
N channel field effect transistor (metal can) |
SESCOSEM |
| 98 |
2N4446 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 99 |
2N4448 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 100 |
2N4977 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 101 |
2N4978 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 102 |
2N4979 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 103 |
2N5179 |
0.200W General Purpose NPN Metal Can Transistor. 12V Vceo, 0.050A Ic, 25 - 250 hFE. |
Continental Device India Limited |
| 104 |
2N5273 |
Thyristors that can be fired at both voltage polarities (triacs) 25A 200V |
Texas Instruments |
| 105 |
2N5274 |
Thyristors that can be fired at both voltage polarities (triacs) 25A 400V |
Texas Instruments |
| 106 |
2N5275 |
Thyristors that can be fired at both voltage polarities (triacs) 25A 600V |
Texas Instruments |
| 107 |
2N5320 |
10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. |
Continental Device India Limited |
| 108 |
2N5321 |
10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 109 |
2N5321 |
TO-39 Metal Can Transistor |
Micro Commercial Components |
| 110 |
2N5323 |
TO-39 Metal Can Transistor |
Micro Commercial Components |
| 111 |
2N5415 |
1.000W General Purpose PNP Metal Can Transistor. 200V Vceo, 1.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| 112 |
2N5416 |
1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 113 |
2N5432 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 114 |
2N5433 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 115 |
2N5434 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 116 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 117 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 118 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 119 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 120 |
2N6430 |
0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. |
Continental Device India Limited |
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