| No. |
Part Name |
Description |
Manufacturer |
| 91 |
DK400-B10 |
DC Current transducer DK-B5/10 |
LEM |
| 92 |
DK400-B420 |
DC Current transducer DK-B020/420 |
LEM |
| 93 |
DK400-B5 |
DC Current transducer DK-B5/10 |
LEM |
| 94 |
DKB5-10 |
DC Current transducer DK-B5/10 |
LEM |
| 95 |
DXTN857P5 |
300V NPN HIGH CURRENT TRANSISTOR POWERDI�5 |
Diodes |
| 96 |
EVALSTPM34 |
Dual-phase energy metering evaluation board with 2 current transformers based on the STPM34 |
ST Microelectronics |
| 97 |
EVALSTPM3X-3PH |
Poly-phase energy metering demonstration board with current transformers based on the STPM33, STPM34 and STM8S903 |
ST Microelectronics |
| 98 |
HTP50NPV |
PCB Mounting Hall Effect Current Transformer Type HTP50NPV |
etc |
| 99 |
IT150-S |
HIGH ACCURACY CURRENT TRANSDUCER |
LEM |
| 100 |
IT600-S |
HIGH ACCURACY CURRENT TRANSDUCER |
LEM |
| 101 |
KC-101 |
AC CURRENT TRANSMITTER |
etc |
| 102 |
MAX-100 |
91.8V; 20A ;144KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
| 103 |
MAX-200 |
181.8V; 20A ;288KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
| 104 |
MAX-225 |
202.5V; 20A ;324KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
| 105 |
MAX-260 |
234.5V; 20A ;288KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
| 106 |
MAX-370 |
333V; 20A ;288KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
| 107 |
MAX-422 |
379.8V; 20A ;288KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
| 108 |
MAX-450 |
405.8V; 20A ;648KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
| 109 |
MAX-470 |
423V; 20A ;648KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
| 110 |
MAX20-100.0C |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 111 |
MAX20-100.0CA |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 112 |
MAX20-110.0C |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 113 |
MAX20-110.0CA |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 114 |
MAX20-120.0C |
120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 115 |
MAX20-120.0CA |
120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 116 |
MAX20-130.0C |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 117 |
MAX20-130.0CA |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 118 |
MAX20-150.0C |
150.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 119 |
MAX20-150.0CA |
150.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 120 |
MAX40-100.0C |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
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