| No. |
Part Name |
Description |
Manufacturer |
| 91 |
JQ1AAP-18V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 92 |
JQ1AP-12V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 93 |
JQ1AP-24V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 94 |
JQ1AP-6V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 95 |
JQ1AP-9V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 96 |
JQ1P-12V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 97 |
JQ1P-18V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 98 |
JQ1P-24V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 99 |
JQ1P-48V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 100 |
JQ1P-5V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 101 |
JQ1P-6V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 102 |
JQ1P-9V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 103 |
KT830L11 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 104 |
KT830L15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 105 |
KT830L51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 106 |
KT830L55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells . Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 107 |
KT830W11 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 108 |
KT830W15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 109 |
KT830W51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 110 |
KT830W55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 111 |
KT831L15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 112 |
KT831L51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 113 |
KT831L55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 114 |
KT831W15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 115 |
KT831W51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 116 |
KT831W55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 117 |
KT832L15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 118 |
KT832L51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 119 |
KT832L55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 120 |
KT832W15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
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