No. |
Part Name |
Description |
Manufacturer |
91 |
3DF0T18 |
Low Dissipation Factor Disc Capacitors |
Vishay |
92 |
3DF0T22 |
Low Dissipation Factor Disc Capacitors |
Vishay |
93 |
3DF0T27 |
Low Dissipation Factor Disc Capacitors |
Vishay |
94 |
3DF0T33 |
Low Dissipation Factor Disc Capacitors |
Vishay |
95 |
3DF0T39 |
Low Dissipation Factor Disc Capacitors |
Vishay |
96 |
3DF0T47 |
Low Dissipation Factor Disc Capacitors |
Vishay |
97 |
3DF0T56 |
Low Dissipation Factor Disc Capacitors |
Vishay |
98 |
3DF0T68 |
Low Dissipation Factor Disc Capacitors |
Vishay |
99 |
3DF0T82 |
Low Dissipation Factor Disc Capacitors |
Vishay |
100 |
3DFO |
Low Dissipation Factor Disc Capacitors |
Vishay |
101 |
5962-0153201QYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose none. |
Aeroflex Circuit Technology |
102 |
5962-0153201TYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose none. |
Aeroflex Circuit Technology |
103 |
5962-0323601QXX |
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish factory option. |
Aeroflex Circuit Technology |
104 |
5962-0323601VXX |
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish factory option. |
Aeroflex Circuit Technology |
105 |
5962-0323602QXX |
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish factory option. |
Aeroflex Circuit Technology |
106 |
5962-0323602VXX |
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish factory option. |
Aeroflex Circuit Technology |
107 |
5962-9326101M2A |
High Power Factor Preregulator |
Texas Instruments |
108 |
5962-9326101MEA |
High Power Factor Preregulator |
Texas Instruments |
109 |
5962-9326102M2A |
Enhanced High Power Factor Preregulator |
Texas Instruments |
110 |
5962-9326102MEA |
Enhanced High Power Factor Preregulator |
Texas Instruments |
111 |
5962-9326103MEA |
ENHANCED HIGH POWER FACTOR PREREGULATOR |
Texas Instruments |
112 |
5962-9960601QUX |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory optional. Total dose none. |
Aeroflex Circuit Technology |
113 |
5962-9960601TUX |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose none. |
Aeroflex Circuit Technology |
114 |
5962-9960602QUX |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose none. |
Aeroflex Circuit Technology |
115 |
5962-9960602TUX |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none. |
Aeroflex Circuit Technology |
116 |
5962D0053601QUX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
117 |
5962D0053601QXX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
118 |
5962D0053601TUX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
119 |
5962D0053601TXX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
120 |
5962D0053602QUX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
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