| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N5995 |
7W, (CW) 175-MHz Silicon NPN Overlay RF Transistor for 12.5 Volt applications in VHF |
RCA Solid State |
| 92 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 93 |
2SC463H |
Silicon NPN Planar, intended for use in VHF RF Amplifier |
Hitachi Semiconductor |
| 94 |
2SC464 |
Silicon NPN Epitaxial Planar Transistor, intended for use in VHF Video IF Amplifier |
Hitachi Semiconductor |
| 95 |
2SC466 |
Silicon NPN Epitaxial Planar Transistor, intended for use in VHF TV Mixer, Oscillator |
Hitachi Semiconductor |
| 96 |
2SC466H |
Silicon NPN Epitaxial Planar Transistor, intended for use in VHF Tuner RF Amp., Mixer, Oscillator |
Hitachi Semiconductor |
| 97 |
2SC683 |
Silicon NPN Planar Transistor, intended for use in VHF TV RF Amplifier |
Hitachi Semiconductor |
| 98 |
2SC717 |
Silicon NPN Epitaxial Planar Transistor, intended for use in VHF RF Amplifier, Mixer, Oscillator |
Hitachi Semiconductor |
| 99 |
2SC856 |
Silicon NPN Triple Diffused LTP Transistor, intended for use in Video Power Output |
Hitachi Semiconductor |
| 100 |
94SL |
Super Miniaturized, Ideal for user in VCR's, Car Stereos, and other Size Critical Applications |
Vishay |
| 101 |
AA112 |
Germanium point contact diode, intended for use in video and audio detection circuits |
IPRS Baneasa |
| 102 |
AN517 |
THE VB027- ELECTRONIC IGNITION IN VIPOWER TECHNOLOGY |
SGS Thomson Microelectronics |
| 103 |
AUIRS2117S |
Automotive Single High Side Driver, Noninverting Input. IN Voltage Threshold 9.5V and 6.0V, Output in phase with Input. |
International Rectifier |
| 104 |
AUIRS2117STR |
Automotive Single High Side Driver, Noninverting Input. IN Voltage Threshold 9.5V and 6.0V, Output in phase with Input. |
International Rectifier |
| 105 |
AUIRS2118S |
Automotive Single High Side Driver, Noninverting Input. IN Voltage Threshold 9.5V and 6.0V, Output out of phase with input. |
International Rectifier |
| 106 |
AUIRS2118STR |
Automotive Single High Side Driver, Noninverting Input. IN Voltage Threshold 9.5V and 6.0V, Output out of phase with input. |
International Rectifier |
| 107 |
BA182 |
Silicon Planar Diode, intended for band switching in VHF television tuners |
Philips |
| 108 |
BA379 |
Silicon PIN Diode, serving as variable RF resistor recommended for use in AGC networks in VHF-UHF TV tuners |
Siemens |
| 109 |
BAT54XY |
Schottky barrier quadruple diode in very small SOT363 package |
NXP Semiconductors |
| 110 |
BAT54XY |
Schottky barrier quadruple diode in very small SOT363 package |
Philips |
| 111 |
BAT54XY |
BAT54XY; Schottky barrier quadruple diode in very small SOT363 package |
Philips |
| 112 |
BAV10 |
High speed diode for core gating applications in very fast memories |
Mullard |
| 113 |
BB139 |
Variable Capacitance Diode with a large capacitance ratio, intended for electronictuning in VHF tuners |
IPRS Baneasa |
| 114 |
BB619 |
Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners) |
Siemens |
| 115 |
BB619C |
Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV/ VTR tuners) |
Siemens |
| 116 |
BB639 |
Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners) |
Siemens |
| 117 |
BB639C |
Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV / VTR tuners) |
Siemens |
| 118 |
BFR90A |
NPN silicon planar epitaxial transistor intended for use in VHF and UHF wideband amplifiers |
Philips |
| 119 |
BFW93 |
Silicon planar epitaxial NPN transistor, intended for use in VHF - UHF applications, primarily wideband aerial amplifiers 40-800MHz |
Philips |
| 120 |
BU3087FV |
Built in VCXO, Spread-Spectrum Clock Generator |
ROHM |
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