No. |
Part Name |
Description |
Manufacturer |
91 |
BCR8PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
92 |
BCR8PM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
93 |
BCR8PM-18 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
94 |
BCR8PM-20 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
95 |
BCR8UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
96 |
BFR29 |
Silicon n channel field effect transistor, insulated GATE FET (MOST) |
Mullard |
97 |
BFS28 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
98 |
BSI |
Moulded and Insulated Wirewound Precision Power Resistors Axial Leads |
Vishay |
99 |
BSM100GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
100 |
BSM100GB120DN2K |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
101 |
BSM100GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
102 |
BSM100GT120DN2 |
IGBT Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
103 |
BSM150GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
104 |
BSM150GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
105 |
BSM200GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) |
Siemens |
106 |
BSM200GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
107 |
BSM25GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
108 |
BSM25GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
109 |
BSM400GB60DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
110 |
BSM50GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
111 |
BSM50GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
112 |
BSM50GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
113 |
BSM50GD120DN2E3226 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) |
Siemens |
114 |
BSM75GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
115 |
BSM75GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
116 |
BSV81 |
Silicon n channel field effect transistor, insulated GATE FET (MOST) |
Mullard |
117 |
BTA12 |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
118 |
BTA12-200B |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
119 |
BTA12-50B |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
120 |
BTA12-600B |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated |
New Jersey Semiconductor |
| | | |