| No. |
Part Name |
Description |
Manufacturer |
| 91 |
10SI9 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 900V |
IPRS Baneasa |
| 92 |
10SI9 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 900V |
IPRS Baneasa |
| 93 |
10SI9R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 900V |
IPRS Baneasa |
| 94 |
10SI9R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 900V |
IPRS Baneasa |
| 95 |
1103 |
1024-BIT random access read/write dynamic memory |
Signetics |
| 96 |
1103-1 |
1024-BIT random access read/write dynamic memory (high speed version) |
Signetics |
| 97 |
1103-1IK |
1024-BIT random access read/write dynamic memory (high speed version) |
Signetics |
| 98 |
1103-1XA |
1024-BIT random access read/write dynamic memory (high speed version) |
Signetics |
| 99 |
1103IK |
1024-BIT random access read/write dynamic memory |
Signetics |
| 100 |
1103XA |
1024-BIT random access read/write dynamic memory |
Signetics |
| 101 |
117S |
3/8in [9.52mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Military Quality at Affordable Prices |
Vishay |
| 102 |
1242 (RJ26 STYLE) |
Bulk Metal Foil Technology, Precision Trimming Potentiometers, QPL Approved 1/4 Inch Square, Qualified to Mil-PRF-22097, Char. F, RJ26 |
Vishay |
| 103 |
1268W100R |
Bulk Metal Foil Technology Precision Trimming Potentiometers 3/8 Inch Square/ RJ24 Style - Industrial Trimmer |
Vishay |
| 104 |
126S |
3/8in [9.52mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Military Quality at Affordable Prices |
Vishay |
| 105 |
12BH7-A |
The 12BH7-A is a miniature medium-mu twin troide designed primarily for use as a vertical-deflection amplifier in television receivers |
General Semiconductor |
| 106 |
12C671 |
EPROM Memory Programming Specification |
Microchip |
| 107 |
12C672 |
EPROM Memory Programming Specification |
Microchip |
| 108 |
12CE673 |
8-Pin/ 8-Bit CMOS Microcontroller with A/D Converter and EEPROM Data Memory |
Microchip |
| 109 |
12F629 |
8-Pin, 8-Bit CMOS Microcontroller with A/D Converter and EEPROM Data Memory |
Microchip |
| 110 |
12S |
1/4 in [6.35mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Special Configurations Available, Military Quality at Affordable Prices |
Vishay |
| 111 |
13PD100-S |
The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
| 112 |
13PD150-S |
The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
| 113 |
1401 |
Bulk Metal Foil Technology, 3 Pin Transistor Outline Hermetic Resistor Network |
Vishay |
| 114 |
1403 |
Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network |
Vishay |
| 115 |
1413 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks |
Vishay |
| 116 |
1417 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 |
Vishay |
| 117 |
1419 |
Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series |
Vishay |
| 118 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 119 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 120 |
1442 |
Bulk Metal Foil Technology, Dual-In-Line Hermetic Resistor Networks |
Vishay |
| | | |
