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Datasheets for P-

Datasheets found :: 4719
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 2N6289 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
92 2N6290 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
93 2N6291 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
94 2N6292 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
95 2N6293 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
96 2N6420 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
97 2N6421 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
98 2N6422 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
99 2N6423 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
100 2N6467 Silicon P-N-P medium-power transistor. -110V, 40W. General Electric Solid State
101 2N6468 Silicon P-N-P medium-power transistor. -130V, 40W. General Electric Solid State
102 2N6469 Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. General Electric Solid State
103 2N6473 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
104 2N6475 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
105 2N6475 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. General Electric Solid State
106 2N6476 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors Boca Semiconductor Corporation
107 2N6476 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. General Electric Solid State
108 2N6489 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. General Electric Solid State
109 2N6490 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. General Electric Solid State
110 2N6491 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. General Electric Solid State
111 2N6609 Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. General Electric Solid State
112 2N6648 10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
113 2N6649 10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
114 2N6650 10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
115 2N6666 10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. General Electric Solid State
116 2N6667 10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
117 2N6668 10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
118 2N6804 -100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package International Rectifier
119 2N6806 -200V Single P-Channel Hi-Rel MOSFET in a TO-204AA package International Rectifier
120 2N6845 -100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package International Rectifier


Datasheets found :: 4719
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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