No. |
Part Name |
Description |
Manufacturer |
91 |
DS87C520-ECL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
92 |
DS87C520-ENL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
93 |
DS87C520-MCL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
94 |
DS87C520-MNL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
95 |
DS87C520-QCL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
96 |
DS87C520-QNL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
97 |
DS87C520-WCL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
98 |
DSP56F802TA80 |
16-bit digital signal processor, up to 40 MIPS operation at 80 MHz core frequency, 8K x 16-bit words program flash, 1K x 16-bit words program RAM, 2K x 16-bit words data flash, 1K x 16-bit words data RAM, 2K x 16-bit words boot flash |
Motorola |
99 |
DSP56F802TA80 |
16-bit digital signal processor, up to 40 MIPS operation at 80 MHz core frequency, 8K x 16-bit words program flash, 1K x 16-bit words program RAM, 2K x 16-bit words data flash, 1K x 16-bit words data RAM, 2K x 16-bit words boot flash |
Motorola |
100 |
EB4 |
Dual Readout, Standard and Right Angle Terminals, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) |
Vishay |
101 |
EB4 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
102 |
EB6 |
Dual Readout, Standard and Right Angle Terminals, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) |
Vishay |
103 |
EB6 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
104 |
EB7 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
105 |
EB8 |
Dual Readout, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) |
Vishay |
106 |
EB8 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
107 |
GMS34004TK |
4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 300KHz-500KHz at KHz version |
Hynix Semiconductor |
108 |
GMS34004TM |
4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 2.4MHz-4MHz at MHz version |
Hynix Semiconductor |
109 |
GMS34004TW |
4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 300KHz-4.2MHz at WIDE version |
Hynix Semiconductor |
110 |
GMS34112TK |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 300KHz-500KHz at KHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
111 |
GMS34112TM |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 2.4MHz-4MHz at MHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
112 |
GMS34112TW |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 300KHz-4.2MHz at WIDE version. Normal operating voltage 4.0-5.0V |
Hynix Semiconductor |
113 |
GMS34140TK |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 10. Operating frequency 300KHz-500KHz at KHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
114 |
GMS34140TM |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 10. Operating frequency 2.4MHz-4MHz at MHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
115 |
GMS34140TW |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 10. Operating frequency 300KHz-4.2MHz at WIDE version. Normal operating voltage 4.0-5.0V |
Hynix Semiconductor |
116 |
M193X |
EPM 16 Electronic Program Memory |
SGS Thomson Microelectronics |
117 |
M293 |
EPM 32 ELECTRONIC PROGRAM MEMORY FOR 32 STATIONS |
ST Microelectronics |
118 |
M293B1 |
V(dd): -0.3 to +7V; 1W; EPM 32 electronic program memory for 32 stations |
SGS Thomson Microelectronics |
119 |
M293B1 |
EPM 32 ELECTRONIC PROGRAM MEMORY FOR 32 STATIONS |
ST Microelectronics |
120 |
NP8751BH |
8-bit control-oriented microcontroller with 4Kx8 internal program EPROM and 128x8 data RAM |
Intel |
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