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Datasheets for PROGRAM

Datasheets found :: 211
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 DS87C520-ECL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
92 DS87C520-ENL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
93 DS87C520-MCL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
94 DS87C520-MNL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
95 DS87C520-QCL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
96 DS87C520-QNL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
97 DS87C520-WCL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
98 DSP56F802TA80 16-bit digital signal processor, up to 40 MIPS operation at 80 MHz core frequency, 8K x 16-bit words program flash, 1K x 16-bit words program RAM, 2K x 16-bit words data flash, 1K x 16-bit words data RAM, 2K x 16-bit words boot flash Motorola
99 DSP56F802TA80 16-bit digital signal processor, up to 40 MIPS operation at 80 MHz core frequency, 8K x 16-bit words program flash, 1K x 16-bit words program RAM, 2K x 16-bit words data flash, 1K x 16-bit words data RAM, 2K x 16-bit words boot flash Motorola
100 EB4 Dual Readout, Standard and Right Angle Terminals, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) Vishay
101 EB4 HI TEMP High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) Vishay
102 EB6 Dual Readout, Standard and Right Angle Terminals, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) Vishay
103 EB6 HI TEMP High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) Vishay
104 EB7 HI TEMP High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) Vishay
105 EB8 Dual Readout, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) Vishay
106 EB8 HI TEMP High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) Vishay
107 GMS34004TK 4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 300KHz-500KHz at KHz version Hynix Semiconductor
108 GMS34004TM 4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 2.4MHz-4MHz at MHz version Hynix Semiconductor
109 GMS34004TW 4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 300KHz-4.2MHz at WIDE version Hynix Semiconductor
110 GMS34112TK 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 300KHz-500KHz at KHz version. Low operating voltage 2.2-4.5V Hynix Semiconductor
111 GMS34112TM 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 2.4MHz-4MHz at MHz version. Low operating voltage 2.2-4.5V Hynix Semiconductor
112 GMS34112TW 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 300KHz-4.2MHz at WIDE version. Normal operating voltage 4.0-5.0V Hynix Semiconductor
113 GMS34140TK 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 10. Operating frequency 300KHz-500KHz at KHz version. Low operating voltage 2.2-4.5V Hynix Semiconductor
114 GMS34140TM 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 10. Operating frequency 2.4MHz-4MHz at MHz version. Low operating voltage 2.2-4.5V Hynix Semiconductor
115 GMS34140TW 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 10. Operating frequency 300KHz-4.2MHz at WIDE version. Normal operating voltage 4.0-5.0V Hynix Semiconductor
116 M193X EPM 16 Electronic Program Memory SGS Thomson Microelectronics
117 M293 EPM 32 ELECTRONIC PROGRAM MEMORY FOR 32 STATIONS ST Microelectronics
118 M293B1 V(dd): -0.3 to +7V; 1W; EPM 32 electronic program memory for 32 stations SGS Thomson Microelectronics
119 M293B1 EPM 32 ELECTRONIC PROGRAM MEMORY FOR 32 STATIONS ST Microelectronics
120 NP8751BH 8-bit control-oriented microcontroller with 4Kx8 internal program EPROM and 128x8 data RAM Intel


Datasheets found :: 211
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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