No. |
Part Name |
Description |
Manufacturer |
91 |
ADA4432-1 |
Single-Ended SD Video Filter Amplifier with Output Short-to-Battery Protection |
Analog Devices |
92 |
ADA4433-1 |
Fully Differential SD Video Filter Amplifier with Output Short-to-Battery Protection |
Analog Devices |
93 |
ADA4830-1 |
High Speed Difference Amplifier with Input Short to Battery Protection |
Analog Devices |
94 |
ADA4830-2 |
High Speed Difference Amplifier with Input Short-to-Battery Protection |
Analog Devices |
95 |
AN1215 |
HOW TO HANDLE SHORT CIRCUIT CONDITIONS WITH ST'S ADVANCED PWM CONTROLLERS L5991 AND L5993 |
SGS Thomson Microelectronics |
96 |
AQY210KSX |
PhotoMOS relay, GU (general use) type. 1-channel(form A) with short circuit protection. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
97 |
AQY210KSZ |
PhotoMOS relay, GU (general use) type. 1-channel(form A) with short circuit protection. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
98 |
AT22V10-15DM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; V�� power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
99 |
AT22V10-15GM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
100 |
AT22V10-15JM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
101 |
AT22V10-15LM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
102 |
AT22V10-15NM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
103 |
AT22V10-20DM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
104 |
AT22V10-20GM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
105 |
AT22V10-20LM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
106 |
AT22V10-20NM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
107 |
AT22V10-25DM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
108 |
AT22V10-25GM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
109 |
AT22V10-25LM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
110 |
AT22V10-25NM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
111 |
BSP350 |
MiniPROFET(High-side switch Short-circuit protection Overtemperature protection with hysteresis) |
Infineon |
112 |
BSP350 |
MiniPROFET (High-side switch Short-circuit protection Overtemperature protection with hysteresis) |
Siemens |
113 |
BSP365 |
MiniSmart(High-side switch Short-circuit protection Overtemperature protection with hysteresis) |
Infineon |
114 |
BSP450 |
MiniPROFET(High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis) |
Infineon |
115 |
BSP450 |
MiniPROFET (High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis) |
Siemens |
116 |
BSP452 |
MiniPROFET (High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis) |
Siemens |
117 |
BSP550 |
MiniPROFET(High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis) |
Infineon |
118 |
BSP550 |
MiniPROFET (High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis) |
Siemens |
119 |
BSW72 |
PNP silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
120 |
BSW73 |
PNP silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
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