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Datasheets for TRANSISTOR W

Datasheets found :: 344
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 FJY3002R NPN Epitaxial Silicon Transistor with Bias Resistor Fairchild Semiconductor
92 FJY3004R NPN Epitaxial Silicon Transistor with Bias Resistor Fairchild Semiconductor
93 FJY4002R PNP Epitaxial Silicon Transistor with Bias Resistor Fairchild Semiconductor
94 FJY4006R PNP Epitaxial Silicon Transistor with Bias Resistor Fairchild Semiconductor
95 IRG4BC20KDS INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) International Rectifier
96 IRG4BC20MDS INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) International Rectifier
97 IRG4BC20SDS INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) International Rectifier
98 IRG4BC20UDS INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) International Rectifier
99 IRG4BC30 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) International Rectifier
100 IRG4BC30KDS INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) International Rectifier
101 IRG4IBC30F INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE International Rectifier
102 IRG4PC40 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) International Rectifier
103 IRG4PH30 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) International Rectifier
104 IRG4PH50 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) International Rectifier
105 IRG4PSH71 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A) International Rectifier
106 IRG4RC10 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A) International Rectifier
107 IRGBC20MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=8.0A) International Rectifier
108 IRGBC20SD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=10A) International Rectifier
109 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=16A) International Rectifier
110 JAN2N918 NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications Motorola
111 MGP11N60ED-D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate ON Semiconductor
112 MGP4N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode ON Semiconductor
113 MGP4N60ED-D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate ON Semiconductor
114 MGP7N60ED Insulated Gate Bipolar Transistor withr Anti-Parallel Diode ON Semiconductor
115 MGP7N60ED-D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate ON Semiconductor
116 MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola
117 MGW12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola
118 MGW12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel ON Semiconductor
119 MGW12N120D-D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate ON Semiconductor
120 MGW20N60D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola


Datasheets found :: 344
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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