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Datasheets for X 8 B

Datasheets found :: 4214
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 28C256ATM-1 High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
92 28C256ATM-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. Turbo IC
93 28C256ATM-2 High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
94 28C256ATM-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
95 28C256ATM-3 High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
96 28C256ATM-4 High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
97 28C256ATM-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
98 28LV256JC-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
99 28LV256JC-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
100 28LV256JC-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
101 28LV256JC-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
102 28LV256JC-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
103 28LV256JC-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
104 28LV256JC-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
105 28LV256JC-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
106 28LV256JI-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
107 28LV256JI-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
108 28LV256JI-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
109 28LV256JI-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
110 28LV256JI-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
111 28LV256JI-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
112 28LV256JI-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
113 28LV256JI-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
114 28LV256JM-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
115 28LV256JM-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
116 28LV256JM-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
117 28LV256JM-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
118 28LV256JM-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
119 28LV256JM-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
120 28LV256JM-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC


Datasheets found :: 4214
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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