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Datasheets for , 100

Datasheets found :: 4524
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No. Part Name Description Manufacturer
91 1N5408 3.0A, 1000V ultra fast recovery rectifier MCC
92 1N5408GP 3.0A, 1000V ultra fast recovery rectifier MCC
93 1N5554 5A standard recovery rectifier diode, 1000V Semtech
94 1N5814 20A, 100V ultra fast recovery rectifier MCC
95 1S1892-2C2 Rectifier stack, 1000V 2.4A TOSHIBA
96 1S1892-3A2 Rectifier stack, 1000V TOSHIBA
97 1S1892-4B2 Rectifier stack, 1000V TOSHIBA
98 1S1892-6A2 Rectifier stack, 1000V TOSHIBA
99 288 Subminiature halogen lamp. 5.0V, 6.0V; 0.90A, 1,00A; 54 lumens, 100 lumens. Gilway Technical Lamp
100 2N3055 NPN power transistor, 100V, 15A SemeLAB
101 2N3055H NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. USHA India LTD
102 2N3056 NPN power transistor, 100V, 15A SemeLAB
103 2N3390 NPN silicon transistor. 25V, 100mA. General Electric Solid State
104 2N3391 NPN silicon transistor. 25V, 100mA. General Electric Solid State
105 2N3391A NPN silicon transistor. 25V, 100mA. General Electric Solid State
106 2N3392 NPN silicon transistor. 25V, 100mA. General Electric Solid State
107 2N3393 NPN silicon transistor. 25V, 100mA. General Electric Solid State
108 2N3394 NPN silicon transistor. 25V, 100mA. General Electric Solid State
109 2N3700 0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
110 2N3704 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 100 - 300 hFE Continental Device India Limited
111 2N3707 0.360W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.200A Ic, 100 - 400 hFE Continental Device India Limited
112 2N3859 Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. General Electric Solid State
113 2N3859A Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. General Electric Solid State
114 2N3860 Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. General Electric Solid State
115 2N4032 0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
116 2N4033 0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
117 2N4347 High voltage silicon N-P-N transistor. 140V, 100W. General Electric Solid State
118 2N5172 0.400W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.150A Ic, 100 - 500 hFE Continental Device India Limited
119 2N5172 NPN silicon transistor. 25V, 100mA. General Electric Solid State
120 2N5232 Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. General Electric Solid State


Datasheets found :: 4524
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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