No. |
Part Name |
Description |
Manufacturer |
91 |
1N5408 |
3.0A, 1000V ultra fast recovery rectifier |
MCC |
92 |
1N5408GP |
3.0A, 1000V ultra fast recovery rectifier |
MCC |
93 |
1N5554 |
5A standard recovery rectifier diode, 1000V |
Semtech |
94 |
1N5814 |
20A, 100V ultra fast recovery rectifier |
MCC |
95 |
1S1892-2C2 |
Rectifier stack, 1000V 2.4A |
TOSHIBA |
96 |
1S1892-3A2 |
Rectifier stack, 1000V |
TOSHIBA |
97 |
1S1892-4B2 |
Rectifier stack, 1000V |
TOSHIBA |
98 |
1S1892-6A2 |
Rectifier stack, 1000V |
TOSHIBA |
99 |
288 |
Subminiature halogen lamp. 5.0V, 6.0V; 0.90A, 1,00A; 54 lumens, 100 lumens. |
Gilway Technical Lamp |
100 |
2N1844A |
SCRs 16 Amperes RMS, 100V |
Motorola |
101 |
2N2324 |
SCRs 1.6 Amperes RMS, 100V |
Motorola |
102 |
2N3055 |
NPN power transistor, 100V, 15A |
SemeLAB |
103 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
104 |
2N3056 |
NPN power transistor, 100V, 15A |
SemeLAB |
105 |
2N3390 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
106 |
2N3391 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
107 |
2N3391A |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
108 |
2N3392 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
109 |
2N3393 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
110 |
2N3394 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
111 |
2N3700 |
0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
112 |
2N3704 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 100 - 300 hFE |
Continental Device India Limited |
113 |
2N3707 |
0.360W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.200A Ic, 100 - 400 hFE |
Continental Device India Limited |
114 |
2N3859 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
115 |
2N3859A |
Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. |
General Electric Solid State |
116 |
2N3860 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
117 |
2N3870 |
SCRs 35 Ampere RMS, 100V |
Motorola |
118 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
119 |
2N4033 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
120 |
2N4214 |
SCRs 1.6 Ampere RMS, 100V |
Motorola |
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